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Journal of Nonlinear Optical Physics & Materials

OPTICAL BISTABILITY SWITCHING PROPERTY IN ONE-DIMENSIONAL NONLINEAR PHOTONIC CRYSTAL

Ming Chen, Chunfei Li, Shaojie Ma, Xu Mai, Weibiao Wang, Yuxue Xia

Published Mar 1, 2005• 3 citations
Publisher

Abstract

Optical bistability device based on nonlinear one-dimensional photonic crystals is designed and manufactured. The device has 20 periods and is made from ZnS and ZnSe layers alternately. When the incident power density reach threshold power density 1.0 × 105 W/cm2, the Ar ion laser, whose wavelength is 514.5 nm, is shifted out of the optical band gap of the one-dimensional nonlinear photonic crystals, so an optical switch is made. It also can be made into an optical bistability device. The threshold power density of the optical bistability is 1.38 × 105 W/cm2 and its switching time is about 100 ps in experiment. The experimental results are in good accordance with the theoretical ones.

DOI
10.1142/s0218863505002487

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Optical bistability device based on nonlinear one-dimensional photonic crystals is designed and manufactured. The device has 20 periods and is made from ZnS and ZnSe layers alternately. When the incident power density reach threshold power density 1.0 × 105 W/cm2, the Ar ion laser, whose wavelength is 514.5 nm, is shifted out of the optical band gap of the one-dimensional nonlinear photonic crystals, so an optical switch is made. It also can be made into an optical bistability device. The threshold power density of the optical bistability is 1.38 × 105 W/cm2 and its switching time is about 100 ps in experiment. The experimental results are in good accordance with the theoretical ones.
We designed and manufactured an optical bistability waveguide device based on nonlinear one-dimensional photonic crystal used CdS_xSe_(1-x) doped glass. This kind of semiconductor doped glass has large nonlinear refractive index and nonlinear fast response time. The distribution of refractive index of the nonlinear one-dimensional photonic crystal waveguide satisfies sine function. We obtained the nonlinear photonic crystal waveguide by exposure holography and etching techniques. Length of the photonic crystal waveguide is about 3 mm. The height of the peak-groove of the waveguide is 0.1 μm. According to our design, the center of bandgap of the one-dimensional photonic crystal lies at 514.5 nm while the power density of the incident light, the incident light was reflected by the photonic crystal. When the power density of the incident light increasing, the bandgap is shifting to the direc-tion of short wavelength due to the decreasing of the refractive index with the increasing of the incident power density, so more incident light is transmitted. In experiment, we used an active mode-locking pulse of Ar ion laser as the light source which wavelength is 514.5 nm, repeating frequency is 82 MHz and pulse width is 200 ps. The light beam was coupled into the device by prism with a laser average power of 1.28 W (in the case of nonlinear saturation operation, optimum coupling efficiency is about 6%). Pulse wave forms of incident light and transmitted from sample were recorded in turn by 7 904 oscilloscope. The optical bistability curve of input power density and output one is fitted by computer. We obtained the threshold power density of bistable switch to be 1.60×10~5 W/cm~2 (it is equivalent to average power of 77 mW) and both the rise and fall time are 63 ps. We used the Finite Difference Time Domain Method to obtain the characteristics of the bandgap shift with the incident power density increasing of the nonlinear photonic crystal and calculate the optical bistability curve of this device. In theory, the threshold power density of bistable switch is about 1.40×10~5 W/cm~2 and the switch time is about 50 ps. The theoretical results agree well with the experimental ones. This device is a new and feasible one for optical information process and optical computing in the future.
We investigate the property of optical bistability in a photonic-crystal one-atom laser when nonlinear microcavity is present. The physical system consists of a coherently driven two-level light emitter strongly coupled to a high-quality microcavity which is embedded within a photonic crystal and another coherent probing field which has incident into the microcavity. In our case, the microcavity is fabricated by nonlinear material and placed as an impurity in photonic crystal. This study reveals that such a system can exhibit optical bistability. The dependence of threshold value and hysteresis loop on the photonic band gap of the photonic crystal, driving field Rabi frequency and dephasing processes, are studied. Our results clearly illustrate the ability to control optical bistability through suitable photonic-crystal architectures and external coherent driving field, and this study suggests that in a photonic-crystal nonlinear microcavity, the one-atom laser acts as an effective controllable bistable device in the design of all-light digital computing systems in the near future.
We demonstrate extremely low-power all-optical bistability by using photonic crystal linear resonators based on InGaAsP quantum-wells. Since the photonic crystal cavity has a high quality-factor and a small mode-volume, the photon density in the cavity is extremely high, which makes it possible to reduce the bistable power. The measured minimum bistable threshold power was 37 muW by using a fiber coupling technique, and the estimated nonlinear refractive index (n2) was -6.84times10-14m2/W at a wavelength of 1610.8 nm which is near the resonant wavelength of quantum-well. The low-power optical bistable operations in a single photonic crystal cavity open the possibility of integrated optical devices such as an all-optical memory and switch, based on photonic crystals
We study the optical bistable properties in one-dimensional photonic crystal with symmetric structure (AB)N(D)M(BA)N, where A is high refractive index medium, B is low refractive index medium, D is defect layer, N is the number of layer periods at the left and right of the defect layer. M determines the thickness of the defect layer with Kerr medium. First, we analyze mechanisms producing bistability by the structure consisted of a nonlinear layer sandwiched between Bragg reflectors. Then by using the transfer matrix method, we calculate numerically the threshold value of the bistability switching in one-dimensional photonic crystals with structure (AB)N(D)M(BA)N. The investigations show that the number of layer periods (N) and the thickness of the defect layer (M) influence the threshold value of the bistability switching. We confirm the parameter of the bistability switching to produce the lower threshold value.
The optical bistability and multistability in one-dimensional photonic crystal with the periodic metal-dielectric structure is investigated theoretically. In linear transmission, a structure with N periods will support N−1 resonant modes which correspond to the transmission peaks. Strong localized effect in these resonant modes is obtained. Optical bistability and multistability can be achieved when the incident wavelength is close to a resonance, which can be seen as an effect of the dynamic shifting of the wavelength of the resonant modes. It is found that the threshold for optical bistability in the periodic resonant structure is lower than the nonresonant metal-dielectric structure.
It is found that there exists a hysteretic response between the incident intensity and the lateral shift for a one-dimensional photonic crystal containing a nonlinear defect. The lateral shift can be greatly enhanced when the incident intensity decreases from a value higher than the switch-up threshold of optical bistability and reaches the maximum at the switch-down threshold. It is also found that the hysteresis is strongly dependent on the nonlinear defect, the incident angle, and the incident frequency. The validity of the theoretical analysis is demonstrated by numerical simulations for a Gaussian beam.