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Electronics Letters

MQW amplifier optical bistability

D.A.H. Mace, M.J. Adams, C.P. Seltzer

Published Jul 18, 1991• 5 citations
Publisher

Abstract

The first demonstration of optical bistability (OB) in multiple quantum well semiconductor optical amplifiers is reported. The frequency dependence of the OB is compared with theory.
DOI
10.1049/el:19910858

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It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.
Mirrorless optical bistability has been established in CdS1 and in multiple quantum well (MQW) GaAs structures2. The mechanism responsible for the bistable behavior in these semiconductors is the coupling between the temperature distribution and the electric field intensity in the sample. In these semiconductors, the mechanism is simple enough that a quantitative analysis should be possible. However, a successful model of bistability in these systems must await a careful experimental analysis of the thermal boundary conditions3. With this caveat we have proceeded with the theoretical development. Steady-state results for CdS and MQW GaAs are presented.
Optical bistability (OB) behavior in quarter-wave-shift (QWS) distributed coupling coefficient (DCC) distributed feedback (DFB) semiconductor laser amplifiers (SLApsilas) is investigated. The simulations are based on a modified transfer-matrix method, which considers grating non-uniformities along the structure as well as gain saturation effect. Switching characteristics, including structural dependence of OB in QWS DCC DFB SLApsilas is demonstrated in the steady state regime. Time-dependent analysis of OB is performed as well, and the dynamics of optical switching is demonstrated.