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Topical Meeting on Optical Bistability (OB)

Models for Absorption-induced Optical Bistability in CdS and Multiple Quantum Well GaAs

Joseph W. Haus, Chi C. Sung, Y. C. Li, C. M. Bowden, J. M. Cook

Published Jan 1, 1985• 0 citations
Publisher

Abstract

Mirrorless optical bistability has been established in CdS1 and in multiple quantum well (MQW) GaAs structures2. The mechanism responsible for the bistable behavior in these semiconductors is the coupling between the temperature distribution and the electric field intensity in the sample. In these semiconductors, the mechanism is simple enough that a quantitative analysis should be possible. However, a successful model of bistability in these systems must await a careful experimental analysis of the thermal boundary conditions3. With this caveat we have proceeded with the theoretical development. Steady-state results for CdS and MQW GaAs are presented.

DOI
10.1364/obi.1985.wd2

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Mirrorless optical bistability has been established in CdS1 and in multiple quantum well (MQW) GaAs structures2. The mechanism responsible for the bistable behavior in these semiconductors is the coupling between the temperature distribution and the electric field intensity in the sample. In these semiconductors, the mechanism is simple enough that a quantitative analysis should be possible. However, a successful model of bistability in these systems must await a careful experimental analysis of the thermal boundary conditions3. With this caveat we have proceeded with the theoretical development. Steady-state results for CdS and MQW GaAs are presented.
It is shown theoretically that optical bistability will exist in a material whose optical absorption is more than linearly proportional to the degree to which the material is excited. No cavity or external feedback is required. The underlying principle of this bistability appears to be a generalization of several previous independent discussions of mirrorless bistabilities in specific physical systems. This bistability and associated differential gain are demonstrated experimentally using a thermal nonlinearity in a GaAs/GaAlAs multiple-quantum-well semiconductor. Theory and experiment show good agreement.
The multiple quantum well structure, GaAs/GaAIAs, displays room temperature optical bistability at very low switching powers in various conditions through the temperature variation and the external voltage across the sample.1,2 We have constructed detailed models to calculate these effects. Coupled Maxwell’s equations and the heat conduction equation are solved to demonstrate how the red shift of the band gap leads to absorptive bistability. The spatial variation of the external field strength is a typical PIN junction and the experimental values of the absorption coefficient are used to obtain the bistability properties as a function of the incident frequency and the biased external voltage. The results based on the actual material constants are in good agreement with the experimental data without adjustable parameters. We also extend the previous work on the stability analysis in the mean-field approximation to this system involving complicated boundary conditions with the propagation effects.
The temperature distribution in a GaAs/(Al,Ga)As multiple quantum well structure was measured with high lateral and temporal resolution while passing through the characteristic hysteresis loop of a thermally induced absorptive optical bistability. In a pump and probe beam experiment, the local transmission spectra of the quantum well structure were recorded and the temperature distribution in the sample was deduced from the spectral positions of characteristic exciton resonances. These resonances remain sufficiently sharp even far above room temperature to guarantee an accuracy of better than 3 K The experiment was conducted under both steady-state and dynamical conditions. The steady-state results were compared with numerical calculations, showing good agreement. The dependence of the relative width of the characteristic hysteresis on the environmental temperature of the bistable sample was investigated. A simple relaxation-time model of the bistability was shown to describe nicely the observed behaviour if the bleaching of the lowest exciton resonance due to high laser intensities is considered. Based on this dependence, a miniature temperature-sensing device using an optical fibre to guide the laser beam is presented.
Optical bistable devices containing GaAs/AlGaAs multiple quantum well (MQW) structures have shown great potential for performing fast low-power optical switching at room temperature.1 The presence of a much stronger exciton absorption feature in the MQW structures compared to bulk GaAs suggests far superior performance in the former. We report the observation of room-temperature bistability in bulk GaAs with input power <10 mW and intensities of a few kW/cm2. The intensities are consistent with the data of Miller et al.2 which show a saturation intensity of nearly 4 kW/cm2 in a MQW sample with a detuning of less than a halfwidth from the peak of the exciton resonance. Our detunings are always several halfwidths.