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Conference on Lasers and Electro-Optics

Low Power Optical Bistability in 1550 nm VCSOAs

Douglas R. Jorgesen, Christopher F. Marki, Haijiang Zhang, Pengyue Wen, Sadik C. Esener

Published May 1, 2007• 0 citations
Publisher

Abstract

Clockwise and counterclockwise bistability are demonstrated in 1550 nm vertical-cavity semiconductor optical amplifiers (VCSOAs) at input powers two orders of magnitude lower than previously. Butterfly bistability is also observed for the first time in VCSOAs.
DOI
10.1109/cleo.2007.4453662

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We report experimental measurements of Optical Bistability (OB) and nonlinear switching in a 1550 nm-Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection and biased below and above its threshold current. Two different types of OB and nonlinear switching, anticlockwise and clockwise, have been observed in both the optical power and wavelength domain. The influence of important parameters including the bias current, the initial wavelength detuning and the optical input power has also been studied. The existence of diverse forms of OB and nonlinear switching in a VCSOA operated in reflection opens the door for the development of inverting and non-inverting logic gates, using, respectively, the anticlockwise or the clockwise nonlinear switching transitions appearing in the VCSOA under external optical injection.
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We report, the first time to our knowledge, an observation of optical bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection mode. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 ìW when the device is biased at 98% of its lasing threshold. We also numerically simulate the optical bistability and obtain good agreement with our experimental observations. Bistable VCSOAs significantly advances the prospect of dense 2-D array of low switching-intensity all-optical logic and memory elements.