A cavity consisting of a superconducting lead film on a sapphire substrate has been fabricated to obtain the enhanced frequency stability possible with this configuration. The cavity exhibits a quality value Q exceeding 2×109 in its TE011 mode with a resonant frequency of 2.689 GHz. Methods of fabrication and testing of the cavity are presented in this article. Since the interface between the film and substrate is exposed to the full value of the resonant magnetic field, our experiment is the most sensitive test to date for enhanced losses at the interface itself. We find no evidence of such losses. In fact, the measured values of the surface resistance match very well predictions for rf losses based on the BCS theory.
A cavity consisting of a superconducting lead film on a sapphire substrate has been fabricated to obtain the enhanced frequency stability possible with this configuration. The cavity exhibits a quality value Q exceeding 2×109 in its TE011 mode with a resonant frequency of 2.689 GHz. Methods of fabrication and testing of the cavity are presented in this article. Since the interface between the film and substrate is exposed to the full value of the resonant magnetic field, our experiment is the most sensitive test to date for enhanced losses at the interface itself. We find no evidence of such losses. In fact, the measured values of the surface resistance match very well predictions for rf losses based on the BCS theory.
We present measurements and simulations of superconducting Nb co-planar waveguide resonators on sapphire substrate down to millikelvin temperature range with different readout powers. In the high temperature regime, we demonstrate that the Nb film residual surface resistance is comparable to that observed in the ultra-high quality, bulk Nb 3D superconducting radio frequency cavities while the resonator quality is dominated by the BCS thermally excited quasiparticles. At low temperature both the resonator quality factor and frequency can be well explained using the two-level system models. Through the energy participation ratio simulations, we find that the two-level system loss tangent is ∼10−2, which agrees quite well with similar studies performed on the Nb 3D cavities.
Low-loss superconducting rf devices are required when used for quantum computation. Here, we present a series of measurements and simulations showing that conducting losses in the packaging of our superconducting resonator devices affect the maximum achievable internal quality factors (Qi) for a series of thin-film Al quarter-wave resonators with fundamental resonant frequencies varying between 4.9 and 5.8 GHz. By utilizing resonators with different widths and gaps, different volumes of the stored electromagnetic energy were sampled, thus affecting Qi. When the backside of the sapphire substrate of the resonator device is adhered to a Cu package with a conducting silver glue, a monotonic decrease in the maximum achievable Qi is found as the electromagnetic sampling volume is increased. This is a result of induced currents in large surface resistance regions and dissipation underneath the substrate. By placing a hole underneath the substrate and using superconducting material for the package, we decrease the Ohmic losses and increase the maximum Qi for the larger size resonators.
The loss in superconducting microwave resonators at low-photon numbers and low temperatures is not well understood but has implications for achievable coherence times in superconducting qubits. We have fabricated single-layer resonators with a high quality factor by patterning a superconducting aluminum film on a sapphire substrate. Four resonator geometries were studied with resonant frequencies ranging from 5 to 7 GHz: a quasi-lumped element resonator, a coplanar strip waveguide resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Transmitted power measurements were taken at 30 mK as a function of frequency and probe power. We find that the resonator loss, expressed as the inverse of the internal quality factor, decreases slowly over four decades of photon number in a manner not merely explained by loss from a conventional uniform spatial distribution of two-level systems in an oxide layer on the superconducting surfaces of the resonator.
Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin temperatures are strongly influenced by two-level systems (TLS) associated with the complex NbOx surface oxide. To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer to suppress Nb2O5 formation and replace the native NbOx interface with a Ta-based oxide.
We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions, and characterize their performance at millikelvin temperatures. Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 10^6 in the near-single-photon regime, with power dependence consistent with reduced TLS-related loss at the metal-air interface. A control Nb device fabricated under the same process shows comparatively lower Q_TLS, consistent with the beneficial effect of the Ta capping layer. Furthermore, ageing tests performed on Nb/Ta resonators after six months reveal a moderate reduction in Q_TLS relative to their initial values, yet the performance remains superior to newly fabricated Nb-only devices. These results suggest that thin Ta encapsulation enhances interface quality and contributes to improved temporal stability while remaining compatible with Nb-based fabrication workflows.
In this master's thesis, I present the design, fabrication, and characterisation of superconducting microwave resonators. These resonators are quarter-wavelength coplanar waveguide resonators, operating at resonance frequencies between 4 GHz and 8 GHz. This kind of resonator is a key component in several applications, ranging from quantum computation devices to parametric amplifiers. Minimising the losses (achieving high internal quality factors) in these resonators is important to maximise performance of the applications they are used for. During the thesis work, we have studied several possible changes to improve the resonator quality.\n\nFabrication of the resonators was done in the Nanofabrication Laboratory at Chalmers University of Technology, and consist of the following steps: cleaning a sapphire or silicon wafer, depositing a layer of superconducting niobium, photolithography, and etching the waveguide. We then measured the resonators in a cryogen-free dilution refrigerator, at a temperature of 10 mK. The measurements consisted of a power sweep, in order to quantify the quality factor at high and low excitation powers. As an example, the first resonator we fabricated had a quality factor of 4.3 x 10^4 at high power (about 10^5 photons in the resonator), and quality factor of 3.7 x 10^4 at the single-photon level.\n\nWe then investigated different loss mechanisms that we expect to negatively affect the quality factor, and how to reduce this loss. Firstly, to reduce radiation losses and magnetic vortex losses, we reduced the lateral dimensions of the resonator. Secondly, as two-level system (TLS) losses are believed to mainly reside at the surfaces of the materials and interfaces between them, we etched into the substrate to selectively move a part of the TLS away from the resonator. We also studied the effect of the meandering of the resonator on the quality factor, as well as using two different etching gasses.\n\nBy gathering all this data, we were then able to compare the different combinations to see the effect of the changing parameters. In conclusion, the reduced lateral dimensions and the removal of part of the substrate indeed reduce the losses, as expected from the theory. We also found interesting behaviour with regards to the meandering, namely that having a meandered structure negatively affects the quality factor.\n\nCombining all results, we can give a guideline for the fabrication of resonators in the future, which gave us a quality factor up to 4.9 x 10^5 at high excitation power, and 3.0 x 10^5 at the single photon level.
The possibility of using very-high-Q superconducting microwave cavities to obtain a strong coupling between the electromagnetic field and a Josephson junction has prompted a study of such systems. Expressions have been obtained describing the dc I-V characteristic of a junction biased so that the Josephson radiation frequency is near a resonance of the cavity in which it is located. The rf power coupled into an X-band (10 GHz) TE011 mode cavity from a weakly coupled junction is approximately 3×10−13 I02 Q W, where I0 is the critical current of the junction and Q is the cavity Q. When the coupling between the junction and cavity is large enough, the I-V characteristic becomes multiple valued and the power coupled to the cavity depends on the state of the system. The maximum power which can be coupled to the cavity is approximately 0.58I0Vdc, where Vdc is the voltage required to bias the junction to the resonant frequency of the cavity.