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arXiv:2207.13024

High quality superconducting Nb co-planar resonators on sapphire substrate

S. Zhu, Francesco Crisa, Mustafa Bal, A. A. Murthy, Jaeyel Lee, Z. Sung, A. Lunin, D. Frolov, Roman Pilipenko, Daniel Bafia, A. Mitra, A. Romanenko, A. Grassellino

Published Jul 26, 2022• 0 citations
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Abstract

We present measurements and simulations of superconducting Nb co-planar waveguide resonators on sapphire substrate down to millikelvin temperature range with different readout powers. In the high temperature regime, we demonstrate that the Nb film residual surface resistance is comparable to that observed in the ultra-high quality, bulk Nb 3D superconducting radio frequency cavities while the resonator quality is dominated by the BCS thermally excited quasiparticles. At low temperature both the resonator quality factor and frequency can be well explained using the two-level system models. Through the energy participation ratio simulations, we find that the two-level system loss tangent is $\sim 10^{-2}$, which agrees quite well with similar studies performed on the Nb 3D cavities.

DOI
10.48550/arxiv.2207.13024

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We present measurements and simulations of superconducting Nb co-planar waveguide resonators on sapphire substrate down to millikelvin temperature range with different readout powers. In the high temperature regime, we demonstrate that the Nb film residual surface resistance is comparable to that observed in the ultra-high quality, bulk Nb 3D superconducting radio frequency cavities while the resonator quality is dominated by the BCS thermally excited quasiparticles. At low temperature both the resonator quality factor and frequency can be well explained using the two-level system models. Through the energy participation ratio simulations, we find that the two-level system loss tangent is ∼10−2\sim 10^{-2}∼10−2, which agrees quite well with similar studies performed on the Nb 3D cavities.
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The loss in superconducting microwave resonators at low-photon numbers and low temperatures is not well understood but has implications for achievable coherence times in superconducting qubits. We have fabricated single-layer resonators with a high quality factor by patterning a superconducting aluminum film on a sapphire substrate. Four resonator geometries were studied with resonant frequencies ranging from 5 to 7 GHz: a quasi-lumped element resonator, a coplanar strip waveguide resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Transmitted power measurements were taken at 30 mK as a function of frequency and probe power. We find that the resonator loss, expressed as the inverse of the internal quality factor, decreases slowly over four decades of photon number in a manner not merely explained by loss from a conventional uniform spatial distribution of two-level systems in an oxide layer on the superconducting surfaces of the resonator.
Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin temperatures are strongly influenced by two-level systems (TLS) associated with the complex NbOx surface oxide. To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer to suppress Nb2O5 formation and replace the native NbOx interface with a Ta-based oxide. We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions, and characterize their performance at millikelvin temperatures. Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 10^6 in the near-single-photon regime, with power dependence consistent with reduced TLS-related loss at the metal-air interface. A control Nb device fabricated under the same process shows comparatively lower Q_TLS, consistent with the beneficial effect of the Ta capping layer. Furthermore, ageing tests performed on Nb/Ta resonators after six months reveal a moderate reduction in Q_TLS relative to their initial values, yet the performance remains superior to newly fabricated Nb-only devices. These results suggest that thin Ta encapsulation enhances interface quality and contributes to improved temporal stability while remaining compatible with Nb-based fabrication workflows.
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