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Applied Physics Letters

Large non-biased all-optical bistability in an electroabsorption modulator using p-i-n-i-p diode and asymmetric Fabry–Perot cavity structure

O.-K. Kwon, K. Kim, Kyung-Sook Hyun, Jongho Baek, B. Lee, E.-H. Lee

Published Jun 3, 1996• 6 citations
Publisher

Abstract

We have constructed a non-biased all-optical bistable device using electroabsorption in multiple quantum wells (MQWs). The device is made of a serial connection of two identical double p-i-n (p-i-n-i-p) diode structures within asymmetric Fabry–Perot (AFP) cavity. This scheme ensures both large internal electric field swing and full exploitation of the light intensity. From the measurement of the diode properties, the non-biased bistability parameters—reflection change of 19%, contrast ratio of 17:1, and bistable loop width of 70%—were obtained.

DOI
10.1063/1.116441

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We have constructed a non-biased all-optical bistable device using electroabsorption in multiple quantum wells (MQWs). The device is made of a serial connection of two identical double p-i-n (p-i-n-i-p) diode structures within asymmetric Fabry–Perot (AFP) cavity. This scheme ensures both large internal electric field swing and full exploitation of the light intensity. From the measurement of the diode properties, the non-biased bistability parameters—reflection change of 19%, contrast ratio of 17:1, and bistable loop width of 70%—were obtained.
This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
This article theoretically proposes a multi-layer Fabry-Perot cavity structure based on nonlinear MoS2, whose cavity is composed of asymmetric photonic crystals. In this structure, we observed a low threshold optical bistability phenomenon on the order of a in the visible light band, which is caused by the large third-order nonlinear conductivity of the bilayer MoS2 and the Fabry-Perot cavity resonance. Research has found that when light is incident from two different directions in an asymmetric Fabry-Perot cavity, the optical bistability exhibits not exactly the same behavior. In addition, we further investigated and found that the optical bistability behavior in this simple multi-layer structure is closely related to parameters such as incident wavelength, Fabry-Perot cavity length, and refractive index of the photonic crystal dielectric. This work provides a new approach for the implementation of low threshold optical bistable devices in the visible light band, which is expected to be applied in nonlinear optical fields such as all optical switches and all optical logic devices.