Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics

Large nonbiased optical bistability device in electroabsorption modulator using symmetric two p-i-n-i-p diode structures

O.-K. Kwon, Kyung-Sook Hyun, K. Kim, E.-H. Lee, X. B. Mei, C.W. Tu

Published Jan 1, 1996• 0 citations
OpenAlex

Abstract

Summary form only given. We have successfully demonstrated an improved nonbiased optical bistability in an GaAs-AlGaAs QW electroabsorption modulator by utilizing nonresonant p-i-n-i-p structure, which has large E while maintaining sufficient light absorption with no external bias.

Related papers

Large non-biased all-optical bistability in an electroabsorption modulator using p-i-n-i-p diode and asymmetric Fabry–Perot cavity structure

O.-K. Kwon, K. Kim, Kyung-Sook Hyun +3 more

We have constructed a non-biased all-optical bistable device using electroabsorption in multiple quantum wells (MQWs). The device is made of a serial connection of two identical double p-i-n (p-i-n-i-p) diode structures within asymmetric Fabry–Perot (AFP) cavity. This scheme ensures both large internal electric field swing and full exploitation of the light intensity. From the measurement of the diode properties, the non-biased bistability parameters—reflection change of 19%, contrast ratio of 17:1, and bistable loop width of 70%—were obtained.

Applied Physics Letters•Jun 3, 1996•6 citations

Nonbiased optical bistable device in an impedance-mismatchedasymmetric Fabry-Perot structure

Young‐Wan Choi, Oh Kee Kwon, Jongho Baek +2 more

It is shown that nonbiased optical bistability in an extremely shallow quantum well symmetric self-electro-optic effect device can be significantly improved by using an impedance-mismatched asymmetric Fabry-Perot scheme. The device in a simple layout shows nonbiased bistability width, ΔR, contrast, and Vop of ~53%, 17%, 3.7:1, and 0.9 V, respectively.

Electronics Letters•Nov 10, 1994•9 citations

Optical bistable responses based on self-electro-optic effect in a nonbiased asymmetric coupled quantum well p-i-n photodiode

Yasunori Tokuda, Yuji Abe

We demonstrated the optical bistable responses of the self-electro-optic effect device without applying any external bias. The function was realized by taking advantage of the significant electric-field dependence of both intensity and wavelength of an excitonic absorption peak, which is related to a resonance of electron levels in an asymmetric coupled quantum well structure. The successful result suggests that it is possible to create an all-optical bistable device with nonsegmented planar structure.

Applied Physics Letters•May 17, 1993•7 citations

Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications

El-Hang Lee

This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 19, 2000•0 citations

Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device

A.S. Pabla, Johnpaul Woodhead, Robert Grey +4 more

The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.

Integrated Photonics Research•Jan 1, 1994•0 citations

Multiple quantum well optical nonlinearities: bistability from increasing absorption and the self electro-optic device

David A. B. Miller

Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.

Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences•Dec 18, 1984•6 citations
We have constructed a non-biased all-optical bistable device using electroabsorption in multiple quantum wells (MQWs). The device is made of a serial connection of two identical double p-i-n (p-i-n-i-p) diode structures within asymmetric Fabry–Perot (AFP) cavity. This scheme ensures both large internal electric field swing and full exploitation of the light intensity. From the measurement of the diode properties, the non-biased bistability parameters—reflection change of 19%, contrast ratio of 17:1, and bistable loop width of 70%—were obtained.
We demonstrated the optical bistable responses of the self-electro-optic effect device without applying any external bias. The function was realized by taking advantage of the significant electric-field dependence of both intensity and wavelength of an excitonic absorption peak, which is related to a resonance of electron levels in an asymmetric coupled quantum well structure. The successful result suggests that it is possible to create an all-optical bistable device with nonsegmented planar structure.
This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.