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Applied Physics Letters

Optical bistable responses based on self-electro-optic effect in a nonbiased asymmetric coupled quantum well p-i-n photodiode

Yasunori Tokuda, Yuji Abe

Published May 17, 1993• 7 citations
Publisher

Abstract

We demonstrated the optical bistable responses of the self-electro-optic effect device without applying any external bias. The function was realized by taking advantage of the significant electric-field dependence of both intensity and wavelength of an excitonic absorption peak, which is related to a resonance of electron levels in an asymmetric coupled quantum well structure. The successful result suggests that it is possible to create an all-optical bistable device with nonsegmented planar structure.

DOI
10.1063/1.109329

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We demonstrated the optical bistable responses of the self-electro-optic effect device without applying any external bias. The function was realized by taking advantage of the significant electric-field dependence of both intensity and wavelength of an excitonic absorption peak, which is related to a resonance of electron levels in an asymmetric coupled quantum well structure. The successful result suggests that it is possible to create an all-optical bistable device with nonsegmented planar structure.
It is shown theoretically that optical bistability is possible in a self-electro-optic effect device (SEED) with single asymmetric quantum wells because of the blue shift of the optical absorption edge with applied field possible in such structures (in contrast to the normal red shift in symmetric wells). The concept is a simplification of the scheme of J. Khurgin [Appl. Phys. Lett. 53, 779 (1988)] (which uses unequal, opposed pairs of asymmetric wells) and shares the potential advantages of lower loss in the transmitting state and less stringent requirements on the exciton absorption peaks.
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.