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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications

El-Hang Lee

Published Apr 19, 2000• 0 citations
Publisher

Abstract

This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.

DOI
10.1117/12.382166

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This paper is to report in a collective review of our recent work that multiply interconnected GaAs/AlGaAs multiple shallow quantum wells p-i-n-i-p type diodes that we designed and fabricated have been useful in realizing novel devices such as non-biased all-optical bistable devices and all- optical oscillators. A pair of two oppositely polarized p-i- n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers. These layers provide large electric field swing and strong light absorption even without any externally applied bias. We observed bistable contrast ratios of 2:1 and an oscillation frequency reaching several MHz. Non-biased scheme can allow high packing density and simple layout due to electrically independent nature of the devices.
We have constructed a non-biased all-optical bistable device using electroabsorption in multiple quantum wells (MQWs). The device is made of a serial connection of two identical double p-i-n (p-i-n-i-p) diode structures within asymmetric Fabry–Perot (AFP) cavity. This scheme ensures both large internal electric field swing and full exploitation of the light intensity. From the measurement of the diode properties, the non-biased bistability parameters—reflection change of 19%, contrast ratio of 17:1, and bistable loop width of 70%—were obtained.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
Monolithic bistable microcavities with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. The design of the whole structure is such that a good cavity finesse and a high contrast in the reflective mode are simultaneously obtained. This results in a bistability power threshold of less than 3 mW at 838 nm and a contrast ratio as high as 30:1. A new method is proposed, which allows to measure the nonlinear refractive index in a quasi-continuous regime, and in the operating conditions for bistability. The nonlinear index is shown to saturate at higher power, which evidences the need of a good cavity finesse for such bistable devices. Memory effect is then demonstrated: the sample can stay in either of its two stable states for more than 1 ms without spontaneously switching, and for input pulses as short as 60 ns. Finally we describe two-beam experiments with a new experimental configuration, also in reflection, which allows to mix the two input beams and extract the output beam with an ideal 100% efficiency.
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.
We report on a novel monolithic all-optical bistable device operating at 980 nm, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum wells located at the antinodes of the microcavity optical field. This design maximizes the interaction with the intracavity field and allowed to use only twelve quantum wells of 10 nm thickness. The first observation of all-optical bistability with strained InGaAs/GaAs quantum wells is reported, with a contrast ratio of 7:1 and a threshold intensity of 1 kW/cm2. The operating wavelength offers key advantages such as the substrate transparency and compatibility with vertical cavity surface emitting lasers.