Physical Review B
Determination of relaxation time of a Josephson junction qubit
S. K. Dutta, Haitan Xu, A. J. Berkley, Roberto Ramos, M. A. Gubrud, J. R. Anderson, Christopher J. Lobb, F. C. Wellstood
Abstract
When a Josephson junction in the zero-voltage state is current-biased below its critical current, the rate that it escapes to the finite-voltage state depends on the quantum state of the junction. By employing a slow current sweep, it is possible to observe experimentally the emptying of the thermally populated first excited level as a well-defined feature in the escape rate. This feature provides a simple method of determining the junction's energy relaxation time ${T}_{1}$, a key parameter for evaluating its utility for quantum computation. We discuss the temperature regime where this effect is readily observable and describe how the emptying depends directly on the relaxation time. Our model of the junction dynamics agrees well with the measured escape rate of a $10\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}\ifmmode\times\else\texttimes\fi{}10\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$ $\mathrm{Nb}\text{\ensuremath{-}}\mathrm{AlOx}\text{\ensuremath{-}}\mathrm{Nb}$ device in the 25 to $300\phantom{\rule{0.3em}{0ex}}\mathrm{mK}$ temperature range, yielding ${T}_{1}\ensuremath{\approx}4\phantom{\rule{0.3em}{0ex}}\mathrm{ns}$.