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New Journal of Physics

Weak coupling Josephson junction as a current probe: effect of dissipation on escape dynamics

Jani M. Kivioja, T E Nieminen, Julien Claudon, O. Buisson, F. W. J. Hekking, Jukka P Pekola

Published Aug 26, 2005• 15 citations
Publisher

Abstract

We have studied the temperature dependence of escape phenomena in various underdamped Josephson junctions (JJs). The junctions had different Josephson coupling energies E J which were relatively small, but larger than the charging energy E C . Upon increasing the temperature T , we first observe the usual cross-over between macroscopic quantum tunnelling and thermally activated (TA) behaviour at temperatures k B T ∼ ℏω p , where ω p is the plasma frequency of the junction. Increasing T further, the width of the switching current distribution has, counterintuitively, a non-monotonic temperature dependence. This can be explained by the novel cross-over from TA behaviour to underdamped phase diffusion. We show that this cross-over is expected to occur at temperatures such that k B T ∼ E J (1 − 4/π Q ) 3 /2, where Q is the quality factor of the junction at the plasma frequency, in agreement with experiment. Our findings can be compared with detailed model calculations which take into account dissipation and level quantization in a metastable well. Particular attention is paid to the sample with the smallest E J , which shows extensive phase diffusion even at the lowest temperatures. This sample consists of a dc-SQUID and a single JJ close to each other, such that the SQUID acts as a tunable inductive protection for the single junction from fluctuations of a dissipative environment. By varying the flux through the dc-SQUID, we present, for the first time, experimental evidence of the escape of a JJ from the phase diffusion regime to the free running state in a tunable environment. We also show that in the zero voltage state the losses mainly occur at frequencies near the plasma resonance.

DOI
10.1088/1367-2630/7/1/179

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We have studied the temperature dependence of escape phenomena in various underdamped Josephson junctions (JJs). The junctions had different Josephson coupling energies E J which were relatively small, but larger than the charging energy E C . Upon increasing the temperature T , we first observe the usual cross-over between macroscopic quantum tunnelling and thermally activated (TA) behaviour at temperatures k B T ∼ ℏω p , where ω p is the plasma frequency of the junction. Increasing T further, the width of the switching current distribution has, counterintuitively, a non-monotonic temperature dependence. This can be explained by the novel cross-over from TA behaviour to underdamped phase diffusion. We show that this cross-over is expected to occur at temperatures such that k B T ∼ E J (1 − 4/π Q ) 3 /2, where Q is the quality factor of the junction at the plasma frequency, in agreement with experiment. Our findings can be compared with detailed model calculations which take into account dissipation and level quantization in a metastable well. Particular attention is paid to the sample with the smallest E J , which shows extensive phase diffusion even at the lowest temperatures. This sample consists of a dc-SQUID and a single JJ close to each other, such that the SQUID acts as a tunable inductive protection for the single junction from fluctuations of a dissipative environment. By varying the flux through the dc-SQUID, we present, for the first time, experimental evidence of the escape of a JJ from the phase diffusion regime to the free running state in a tunable environment. We also show that in the zero voltage state the losses mainly occur at frequencies near the plasma resonance.
We have investigated the dynamics of underdamped Josephson junctions with a relatively small Josephson coupling EJ{E}_{J}EJ​. In addition to the usual crossover between macroscopic quantum tunneling and thermally activated (TA) behavior we observe, for the first time, the transition from TA behavior to underdamped phase diffusion. Above the crossover temperature, the threshold for switching into the finite-voltage state becomes extremely sharp. We propose a (TTT, EJ{E}_{J}EJ​) phase diagram with various regimes and show that for a proper description of it, dissipation and level quantization in a metastable well are crucial.
A new phase diffusive regime in a current biased Josephson junction is theoretically explored which originates from embedding the junction in a circuit environment with anomalous dissipation. This is realized by placing parallel to the junction a resistor in series with a capacitor such that electromagnetic fluctuations effectively couple also to the charge of the junction. This leads to rich Josephson dynamics, in particular for the switching of the junction out of a zero voltage state. Modelled as the escape process of a fictitious phase-particle out of a metastable well, a detailed study reveals that anomalous dissipation has a strong impact at low temperatures when quantum tunneling dominates against thermal activation. As a manifestation, a regime is found, where for realistic circuit parameters the quantum escape process is substantially enhanced, followed by a short voltage pulse and re-trapping with high probability. This class of circuits may be leveraged for detecting microwave photons or dissipative quantum annealing processes. In addition, the analysis provides a general framework for engineering dissipative dynamics in nonlinear systems using anomalous environments.
The Josephson effect is a privileged access to the macroscopic quantum nature of superconductors. We review some ideas and experimental techniques on macroscopic quantum decay phenomena occurring in Josephson structures. The attention is mainly addressed to intermediate levels of dissipation which characterize a large majority of low critical current Josephson devices and are therefore an avoidable consequence of nanotechnology applied more and more to Josephson devices. Phase diffusion phenomena take over thermal activation in some temperature ranges also affecting the transition to macroscopic quantum tunneling, enriching the phase diagram mostly defined by the Josephson energy, the temperature and the level of dissipation.
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature T^{*} is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate damping, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, T^{*} is also tuned by a magnetic flux.
A two-step transition model describing phase diffusion and switching process in underdamped Josephson junctions is discussed. The model takes into account the phase particle's escape rate out of the potential well and transition rate from phase diffusion to the running state. Using as examples the experimental switching current distributions of two Nb/AlO x /Nb junctions of different sizes fabricated on the same chip, we extract the transition rate, which turns out to follow the predicted Arrhenius law in the thermal regime but is greatly enhanced when macroscopic quantum tunneling becomes the dominant escape mechanism. Our results show the validity of applying the model to obtain the transition rate out of the phase diffusion state into the running state from measured switching current distribution of underdamped Josephson junctions. The temperature and bias-current dependent data provide strong evidence for phase diffusion in both thermal and quantum regimes.
We report on measurements of the switching current probability both in the thermal and quantum regime on moderately damped NbN/MgO/NbN Josephson junctions with very low critical current density (’ 2A/cm2). We observed three distinct regimes: below 90 mK the width of the switching distributions is constant within the experimental error, while from 90 mK to 1.6 K the width increases with temperature, this change of behavior signaling the standard transition from macroscopic quantum tunneling (MQT) to thermal activation (TA) regime respectively. Above 1.6 K we find effects of anti-correlation between the bath temperature and thermal fluctuations since the width of the histograms starts to collapse, and indications of a transition to a third regime called Phase Diffusion (PD) are evident, such as the change of the switching distributions symmetry. Experimental data have been analyzed through numerical fitting of the switching probability and Monte Carlo simulations, and we found a good agreement with theoretical expectations based on multiple re-trapping processes, which strongly depend on the junction damping. The parameters which completely characterize the dynamics of such moderately damped Josephson junctions have been also extracted.