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arXiv:cond-mat/0501383 · Physical Review Letters

Observation of Transition from Escape Dynamics to Underdamped Phase Diffusion in a Josephson Junction

Jani M. Kivioja, T. E. Nieminen, Julien Claudon, O. Buisson, F. W. J. Hekking, Jukka P Pekola

Published Jun 22, 2005• 90 citations
arXivHTMLPDF

Abstract

We have investigated the dynamics of underdamped Josephson junctions with a relatively small Josephson coupling ${E}_{J}$. In addition to the usual crossover between macroscopic quantum tunneling and thermally activated (TA) behavior we observe, for the first time, the transition from TA behavior to underdamped phase diffusion. Above the crossover temperature, the threshold for switching into the finite-voltage state becomes extremely sharp. We propose a ($T$, ${E}_{J}$) phase diagram with various regimes and show that for a proper description of it, dissipation and level quantization in a metastable well are crucial.

DOI
10.1103/physrevlett.94.247002

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We have investigated the dynamics of underdamped Josephson junctions with a relatively small Josephson coupling EJ{E}_{J}EJ​. In addition to the usual crossover between macroscopic quantum tunneling and thermally activated (TA) behavior we observe, for the first time, the transition from TA behavior to underdamped phase diffusion. Above the crossover temperature, the threshold for switching into the finite-voltage state becomes extremely sharp. We propose a (TTT, EJ{E}_{J}EJ​) phase diagram with various regimes and show that for a proper description of it, dissipation and level quantization in a metastable well are crucial.
We have studied the temperature dependence of escape phenomena in various underdamped Josephson junctions (JJs). The junctions had different Josephson coupling energies E J which were relatively small, but larger than the charging energy E C . Upon increasing the temperature T , we first observe the usual cross-over between macroscopic quantum tunnelling and thermally activated (TA) behaviour at temperatures k B T ∼ ℏω p , where ω p is the plasma frequency of the junction. Increasing T further, the width of the switching current distribution has, counterintuitively, a non-monotonic temperature dependence. This can be explained by the novel cross-over from TA behaviour to underdamped phase diffusion. We show that this cross-over is expected to occur at temperatures such that k B T ∼ E J (1 − 4/π Q ) 3 /2, where Q is the quality factor of the junction at the plasma frequency, in agreement with experiment. Our findings can be compared with detailed model calculations which take into account dissipation and level quantization in a metastable well. Particular attention is paid to the sample with the smallest E J , which shows extensive phase diffusion even at the lowest temperatures. This sample consists of a dc-SQUID and a single JJ close to each other, such that the SQUID acts as a tunable inductive protection for the single junction from fluctuations of a dissipative environment. By varying the flux through the dc-SQUID, we present, for the first time, experimental evidence of the escape of a JJ from the phase diffusion regime to the free running state in a tunable environment. We also show that in the zero voltage state the losses mainly occur at frequencies near the plasma resonance.
Quantum phase diffusion in a small underdamped Nb/AlO(x)/Nb junction (∼0.4 μm(2)) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.
A two-step transition model describing phase diffusion and switching process in underdamped Josephson junctions is discussed. The model takes into account the phase particle's escape rate out of the potential well and transition rate from phase diffusion to the running state. Using as examples the experimental switching current distributions of two Nb/AlO x /Nb junctions of different sizes fabricated on the same chip, we extract the transition rate, which turns out to follow the predicted Arrhenius law in the thermal regime but is greatly enhanced when macroscopic quantum tunneling becomes the dominant escape mechanism. Our results show the validity of applying the model to obtain the transition rate out of the phase diffusion state into the running state from measured switching current distribution of underdamped Josephson junctions. The temperature and bias-current dependent data provide strong evidence for phase diffusion in both thermal and quantum regimes.
We present a clear observation of the presence of energy levels quantization in high quality $\mathrm{Nb}\ensuremath{-}{\mathrm{AlO}}_{x}\ensuremath{-}\mathrm{Nb}$ underdamped Josephson junctions at temperatures above the quantum crossover temperature. This has been possible by extending the measurements of the escape rate out of the zero-voltage state at higher sweeping frequency ( dI/dtdI/dtdI/dt up to 25 A/sec) in order to induce nonstationary conditions in the energy potential describing the junction dynamics.
A macroscopic variable, the phase difference across a Josephson junction, is shown to obey quantum mechanics by observing the phenomena of energy-level quantization and quantum tunneling.The relevant parameters of the junction were determined .!.!! .ill!:!, in the thermal regime from the dependence of the escape rate on bias current and from resonant activation in the presence of microwaves.The first observation of quantized energy levels for this system is reported.The positions of these energy levels are in quantitative agreement with the quantum mechanical predictions based on the measured junction parameters.A model is presented that predicts correctly the observed resonance shapes.The measured value of the escape rate out of the zero-voltage state for an underdamped (Q -30) junction was found to be independent of temperature at low temperatures.This low temperature escape rate was in excellent agreement with the prediction for macroscopic quantum tunneling, with no adjustable parameters.Jolw rJt..
The Josephson effect is a privileged access to the macroscopic quantum nature of superconductors. We review some ideas and experimental techniques on macroscopic quantum decay phenomena occurring in Josephson structures. The attention is mainly addressed to intermediate levels of dissipation which characterize a large majority of low critical current Josephson devices and are therefore an avoidable consequence of nanotechnology applied more and more to Josephson devices. Phase diffusion phenomena take over thermal activation in some temperature ranges also affecting the transition to macroscopic quantum tunneling, enriching the phase diagram mostly defined by the Josephson energy, the temperature and the level of dissipation.