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Physica C Superconductivity

Fabrication and characteristics of elementary oxide RSFQ circuits

Yoshinobu Tarutani, Yoshihiro Ishimaru, H. Wakana, Masahiro Horibe, Seiji Adachi, Hideyuki Sugiyama, Yasuo Oshikubo, Osami Horibe, Toshiaki Suzuki, K. Tanabe

Published Jun 30, 2003• 1 citation
Publisher
DOI
10.1016/s0921-4534(03)01059-1

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RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.
Design and Operation of RSFQ Cell Library Fabricated by Using a 10-kA/cm2{\rm kA/cm}^{2}kA/cm2 Nb Technology
A 10-kA/cm2Nb/AlOchi/Nb junction technology for rapid single flux quantum (RSFQ) integrated circuits has been developed. Modifying our standard 1.6-kA/cm2cell library, we have implemented elementary cells used to build RSFQ digital-to-analog converters for ac voltage standard applications. The 10-kA/cm2library cells have been fabricated by utilizing existing process tools. Correct operations of the circuits have been confirmed at low speed. The maximum operating frequencies evaluated by an average-voltage measurement technique were consistent with the scaling rules of RSFQ circuits.