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IEEE Transactions on Applied Superconductivity

Fabrication of interface elements for oxide RSFQ circuits

Y. Tarutani, Yoshihiro Ishimaru, H. Wakana, Masahiro Horibe, H. Sugiyama, Seiji Adachi, Yasuo Oshikubo, Osami Horibe, T. Suzuki, K. Tanabe, Ushio KAWABE

Published Jun 1, 2003• 6 citations
Publisher

Abstract

RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.

DOI
10.1109/tasc.2003.813882

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IEEE Transactions on Applied Superconductivity•Mar 1, 2001•4 citations
RSFQ circuit elements were fabricated based on the YBa/sub 2/Cu/sub 3/O/sub 7-x/ ramp-edge junctions and their characteristics were investigated. In particular, two types of interface circuits were designed, fabricated and their amplification functions were evaluated. The interface circuits comprised series array of SQUID's that shared a common inductor each other. Each SQUID was switched between zero voltage state and voltage state by current injection. Input signal was AC Josephson current for the type-one interface circuit. The input signal was an SFQ for the type-two interface circuit. Both interface circuits could successfully be operated. In particular, an output voltage more than 1 mV was obtained for the type-one interface circuit that comprised the stack of five SQUID's.
Basic SFQ circuit components, such as SFQ-dc converter, set-reset flip-flop (RS-FF), confluence buffer and splitter, have been fabricated by the YBa/sub 2/Cu/sub 3/O/sub 7-x/-ramp-edge-junction technology and their logic operations were investigated. Circuit parameters were optimized in order to widen the margins of these oxide SFQ circuit components. The SFQ-dc converter that comprised double SQUIDs connected in series showed the output voltage as much as 0.3 mV at 22 K owing to high I/sub c/R/sub n/ value of the ramp-edge junction. Logic operations of the RS-FF, the confluence buffer and the splitter were correctly performed by using the SFQ-dc converter. Finite operating margins were obtainable for these circuits up to the temperature near 30 K.
Latching-type driver circuits integrated with high-temperature superconductivity (HTS) junctions and two types of resistor were fabricated. These circuits could successfully perform latching operation by means of a single-flux-quantum (SFQ) signal input. Ramp-edge-type HTS junctions were fabricated by interface engineering and showed a hysteretic current-voltage characteristics under a temperature of 50 K. The critical current (I/sub c/) of these 5-micron-wide junctions was about 0.2 mA and the I/sub c/R/sub n/ product was about 1.7 mV at 4.2 K. The circuits included two types of resistors, which were made of RF-magnetron-sputtered indium-tin-oxide (ITO) and Au films. A driver with a parallel 2-junction-stack could convert an SFQ pulse, which was transformed through several Josephson transmission lines (JTL's) from a DC/SFQ circuit, to a 2.3-mV level signal.
Interface circuits for the RSFQ circuit system were designed, fabricated and their frequency characteristics were investigated. Key elements of the interface circuit were the series array of SQUIDs and a JTL as a control line of the SQUID. The interface circuit was designed to cover the operating frequencies much greater than 10 GHz. A high-frequency signal generator circuit consisting of a ring oscillator, a frequency divider, and an interface circuit was fabricated. High frequency signals produced in the ring oscillator could be detected by using the interface circuit. The h/2e relationship between the oscillation frequency and the ac Josephson voltage was verified.
We developed a latching-type driver using capacitively shunted high-temperature superconductivity (HTS) junctions for Single-Flux-Quantum (SFQ)-semiconductor output interfaces and fabricated it using ramp-edge-type HTS junctions. Assuming a junction IcRn product of 2 mV, a circuit simulation shows that the driver can produce an output of about 8 mV from an SFQ input pulse with a sufficiently short rise time for an interface clock operation of several gigahertz. HTS junctions were fabricated using the interface engineering method, and capacitors were made from an Indium oxide insulator (the dielectric constant was about 23 at 20 K) sandwiched by YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) electrodes. The hysteresis of the I-V characteristics of the junctions increased by increasing the area of capacitance. The latching operation of the driver was observed with an output voltage of up to 3 mV.
Single flux quantum (SFQ) circuit components such as an SFQ-dc converter and a confluence buffer have been fabricated by using an YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// ramp-edge junction technology and their logic operations at temperatures up to near 60 K were investigated. The SFQ-dc converter was correctly operated in a wide temperature range from 4.2 K to 56 K and found to be useful for detecting output signals from other SFQ circuit components at any operating temperatures. The basic function that a signal from either of two input Josephson transmission lines (JTLs) was transmitted to an output JTL was confirmed for the confluence buffer and finite operating margins were obtained at temperatures from 42 K to 61 K. The narrowest margin of dc supply current obtained at temperatures from 55 K to 60 K was /spl plusmn/20% and was consistent with the simulation. Margin reduction due to thermal noise was also evaluated. According to the analytical calculation, the operating margin to keep the bit-error rate less than 10/sup -5/ was as large as /spl plusmn/20% even at 50 K when the value of junction critical-current I/sub c/ was kept near 0.4 mA.
We fabricated single flux quantum RS flip-flop circuits by using ramp-edge Josephson junctions and tested their performance. The junctions were constructed with two Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) electrodes and a barrier layer. As barrier materials we used cobalt-doped YBCO. To insulate between YBCO layers we used Sr/sub 2/AlTaO/sub 6/ (SAT) thin films. We also fabricated RS flip-flop circuits by using YBCO ground planes to reduce the inductance of YBCO film. The fabricated Josephson junctions showed typical RSJ-like current-voltage (I-V) characteristics above 50 K. We could successfully demonstrate the correct operation of the RS flip-flop circuits at the temperatures near 50 K. We used a computer controlled digital measurement set-up to test the circuits. The RS flip-flop circuit fabricated on a ground plane showed more definite set and reset states on the voltage-flux (V-/spl phi/) modulation curves of the read SQUID than those of the circuit made without ground plane. This may be attributed to the shielding effect by a YBCO ground plane.