Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

AIP conference proceedings

Adiabatic rapid passage on a single exciton

Yanwen Wu, I. M. Piper, Matthias Ediger, Peter Brereton, Emma Schmidgall, R. T. Phillips, P. R. Eastham, Maxime Hugues, M. Hopkinson, Jisoon Ihm, Hyeonsik Cheong

Published Jan 1, 2011• 0 citations
Publisher

Abstract

We demonstrate adiabatic rapid passage in a single excitonic system using chirped optical pulses. In the adiabatic regime, population is fully inverted regardless of detuning and excitation power in contrast to Rabi oscillations.
DOI
10.1063/1.3666468

Related papers

Rapid adiabatic passage in quantum dots: Influence of scattering and dephasing

K. Schuh, F. Jahnke, Michael Lorke

Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.

Applied Physics Letters•Jul 4, 2011•12 citations

Robust Optical Inversion of the Excitonic Population of InGaAs Quantum Dots via Adiabatic Rapid Passage

Peter Brereton, Yanwen Wu, Isobel Piper +6 more

We show population inversion in a semiconductor quantum dot with a chirped optical pulse via adiabatic rapid passage. This method is insensitive to variations in the dipole coupling and provides a new tool for preparing ensembles of quantum states.

Conference on Lasers and Electro-Optics•Jan 1, 2011•0 citations

Subpicosecond adiabatic rapid passage in a single InGaAs quantum dot: Role of phonons in dephasing

Reuble Mathew, Eric Dilcher, Angela Gamouras +4 more

Robust excitation of an exciton state via adiabatic rapid passage is demonstrated in a single InGaAs quantum dot using subpicosecond optical pulses. A chirp sign dependence of the transfer efficiency indicates dephasing tied to phonons.

Journal of International Crisis and Risk Communication Research•Jan 1, 2014•0 citations

Subpicosecond adiabatic rapid passage on a single semiconductor quantum dot: Phonon-mediated dephasing in the strong-driving regime

Reuble Mathew, Eric Dilcher, Angela Gamouras +5 more

We demonstrate adiabatic rapid passage on a subpicosecond time scale in a single semiconductor quantum dot, enabling the exploration of a regime of strong (and rapidly varying) Rabi energies for optical control of excitons. An observed dependence of the exciton inversion efficiency on the sign of the pulse chirp demonstrates the dominance of phonon-mediated dephasing, which is suppressed for positive chirp at low temperature. Our findings will support the realization of dynamical decoupling strategies and suggest that multiphonon emission and/or non-Markovian effects should be taken into account.

Physical Review B•Jul 25, 2014•44 citations

Population Inversion in a Single InGaAs Quantum Dot Using the Method of Adiabatic Rapid Passage

Yanwen Wu, I. M. Piper, Matthias Ediger +6 more

Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.

arXiv:1006.0953•Physical Review Letters•Feb 8, 2011•114 citations

Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

Timo Kaldewey, Sebastian Lüker, Andreas V. Kuhlmann +7 more

Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultrashort laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effective for small pulse areas, while for higher pulse areas a decoupling of the exciton from the phonons occurs. We thus discover a reappearance of rapid adiabatic passage, in analogy to the predicted reappearance of Rabi rotations at high pulse areas. The measured results are in good agreement with theoretical calculations.

arXiv:1701.01304•Physical review. B./Physical review. B•Jun 26, 2017•42 citations
Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.
We demonstrate adiabatic rapid passage on a subpicosecond time scale in a single semiconductor quantum dot, enabling the exploration of a regime of strong (and rapidly varying) Rabi energies for optical control of excitons. An observed dependence of the exciton inversion efficiency on the sign of the pulse chirp demonstrates the dominance of phonon-mediated dephasing, which is suppressed for positive chirp at low temperature. Our findings will support the realization of dynamical decoupling strategies and suggest that multiphonon emission and/or non-Markovian effects should be taken into account.
Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultrashort laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effective for small pulse areas, while for higher pulse areas a decoupling of the exciton from the phonons occurs. We thus discover a reappearance of rapid adiabatic passage, in analogy to the predicted reappearance of Rabi rotations at high pulse areas. The measured results are in good agreement with theoretical calculations.