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Le Journal de Physique Colloques

CdS SELF-ELECTRO-OPTIC EFFECT DEVICE

M. Wegener, A. Witt, Claus F. Klingshirn, Dietmar R. Gnass, Yasushi Iyechika, D. Jäger

Published Jun 1, 1988• 2 citations
Publisher

Abstract

We present a CdS-SEED based on photothermal induced absorption optical bistability at room temperature. It is demonstrated, that this element may controll (a) photonics with photonics (whereby e.g. the gain of an optical transistor can be engineered via the applied voltage), (b) photonics with electronics (with big contrast ratio and voltages which are compatible with usual electronic logic levels) and (c) electronics with photonics with reasonable contrast ratio.

DOI
10.1051/jphyscol:1988224

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We present a CdS-SEED based on photothermal induced absorption optical bistability at room temperature. It is demonstrated, that this element may controll (a) photonics with photonics (whereby e.g. the gain of an optical transistor can be engineered via the applied voltage), (b) photonics with electronics (with big contrast ratio and voltages which are compatible with usual electronic logic levels) and (c) electronics with photonics with reasonable contrast ratio.
It has been demonstrated that thin CdS crystal platelets at room temperature may exhibit all-optical bistability under illumination with the 514nm line of an Ar+-laser1. In this case the local heating of the sample leads to induced absorption optical bistability. In the present paper we evaporate metallic contacts on CdS crystals and apply an external bias voltage. The carriers created by the incoming light lead to a photo-current which in turn increases the temperature of the sample by electrical power via Joule's heat and thereby changes the optical properties 2,3.
The ability to enhance optical nonlinearities associated with the photogeneration of free carriers can be accomplished with carrier multiplication. The gain mechanism provided by carrier multiplication is inherently feasible in avalanche photodiodes. We present results from optical bistability experiments performed on silicon avalanche photodiodes under reverse bias conditions in the case of thermal nonlinearities (Joule heating) and electronic nonlinearities (free carrier plasma effects). The reflected intensity versus the operating voltage is measured at the input intensity of the diode, as is also the output photocurrent versus operating voltage; in both instances, the reflected signal or photocurrent are multivalued functions of the operating voltage. We label such a device as an avalanche-enhanced self-electro-optic-effect device or A-SEED.
An all-optical bistable device and an electro-optical bistable device, with performances approaching the fundamental statistical limits, are described. In the all-optical approach, the giant nonlinearities associated with bound excitons in CdS are exploited to demonstrate the lowest-switching-energy (< 4 pJ) all-optical bistable device. The device switches in less than 1 ns and fully recovers in less than 2 ns. These times are detector limited. A switching energy of less than 1 fJ is theoretically predicted for an optimized geometry. In the electro-optical approach, an InGaAsP/InP diode laser amplifier is used to demonstrate bistability with less than 6000 photons (< 8 X 10-16 J) incident on the device. The device switches in less than 1 ns and is cascadable since it has a gain of 100. It operates at room temperature and is compatible with diode laser sources.
Increasing absorption optical and optoelectronic bistability in hybrid thermooptical Si devices (Fig. 1) are studied at 1.06 μm both theoretically and experimentally. The optical nonlinearity of such SEED devices is largely enhanced by the optoelectronically generated electrical power [1,2] and it is shown that the characteristics can easily be controlled by the applied voltage. Additionally, it is found that the external resistance R adds a further nonlinearity. As an important result, two hysteresis cycles can now occur in succeeding regions of the input power (Fig. 2). If R is replaced by a conventional photodetector or a second SEED element, interesting logic operations between two independent optical signals are possible. Au doped samples reveal that the bistability depends on the orientation of the electric field. Since Au traps control also the absorption we conclude finally that the device characteristics can largely be engineered.