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AIP conference proceedings

Influence of the Exciton Dark State on the Optical and Quantum Optical Properties of Single Quantum Dots

Matthias Reischle, Gareth J. Beirne, Robert Roßbach, Michael Jetter, Peter Michler, Marilia Junqueira Caldas, Nélson Studart

Published Jan 1, 2010• 0 citations
Publisher

Abstract

The optical properties of single InP/GaInP quantum dots are strongly affected by the dark exciton state. The exciton intensity and decay time are strongly reduced at low temperatures. Additionally, memory effects have been observed in second‐order autocorrelation and cross‐correlation measurements that last over several excitation cycles. This behavior has been simulated using a rate equation model.

DOI
10.1063/1.3295403

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The optical properties of single InP/GaInP quantum dots are strongly affected by the dark exciton state. The exciton intensity and decay time are strongly reduced at low temperatures. Additionally, memory effects have been observed in second‐order autocorrelation and cross‐correlation measurements that last over several excitation cycles. This behavior has been simulated using a rate equation model.
The dark exciton state strongly affects the optical and quantum optical properties of flat InP/GaInP quantum dots. The exciton intensity drops sharply compared to the biexciton with rising pulsed laser excitation power while the opposite is true with temperature. Also, the decay rate is faster for the exciton than the biexciton and the dark-to-bright state spin flip is enhanced with temperature. Furthermore, long-lived dark state related memory effects are observed in second-order cross-correlation measurements between the exciton and biexciton and have been simulated using a rate-equation model.
The dynamics of single photon emitters based on InP/(Ga,In)P quantum dots (QDs) has been studied by time‐resolved photo luminescence (TRPL) and photon correlation spectroscopy (PCS) up to 50 K. The increase of temperature produces marked effects on the exciton photoluminescence (PL) decay time (τX) and on the anti‐bunching time (τR) in the second order photon correlation function. Both times are found to depend on the QD size. A competition of the thermally activated Dark‐to‐Bright (D→B) exciton transition and the thermal excitation of the carriers to‐ and from the QD give a good qualitative understanding of the observed results. Resonant excitation at the QD p‐states produces a marked decrease of τR together with the appearance of time bunching in a longer time scale.
Abstract We present the results of systematic autocorrelation and cross‐correlation measurements performed on photons originating from various excitonic transitions in a single CdTe/ZnTe quantum dot (QD). Excitation power dependence of photoluminescence intensity was also measured on the same dot under the same experimental conditions. Recorded correlation histograms have provided evidence for memory effects in QD photoluminescence extending over a few excitation periods. Rate equation model assuming a ladder of states and excitation through a single carrier and exciton capture, is fitted to the data. As a consequence, simultaneous quantitative description of the results of both, correlation and power dependence, is obtained. Strong evidence is presented for a QD excitation by capture of single carriers rather than entire excitons. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Photon correlation measurements are performed on single GaAs quantum dots with various excitonic radiative lifetimes. A continuous increase of the probability that the quantum dot emits more than one photon per excitation pulse is observed when decreasing the exciton radiative lifetime. The authors show that this increase is due to recapture processes into the quantum dot. A model for the second-order autocorrelation function including relaxation processes is developed and gives good description of the experimental observations.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.