AIP conference proceedings

Dynamics of InP∕(Ga,In)P quantum-dot single-photon emitters

A. K. Nowak, María Dolores Martín, E. Gallardo, Herko P. van der Meulen, L. Viña, J. M. Calleja, Jose María Ripalda, Luisa González, Yolanda Gonzalez, Jisoon Ihm, Hyeonsik Cheong

Published Jan 1, 2011• 0 citations

Publisher

Abstract

The dynamics of single photon emitters based on InP/(Ga,In)P quantum dots (QDs) has been studied by time‐resolved photo luminescence (TRPL) and photon correlation spectroscopy (PCS) up to 50 K. The increase of temperature produces marked effects on the exciton photoluminescence (PL) decay time (τX) and on the anti‐bunching time (τR) in the second order photon correlation function. Both times are found to depend on the QD size. A competition of the thermally activated Dark‐to‐Bright (D→B) exciton transition and the thermal excitation of the carriers to‐ and from the QD give a good qualitative understanding of the observed results. Resonant excitation at the QD p‐states produces a marked decrease of τR together with the appearance of time bunching in a longer time scale.

DOI: 10.1063/1.3666509

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