Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review Letters

Influence of the Dark Exciton State on the Optical and Quantum Optical Properties of Single Quantum Dots

Matthias Reischle, Gareth J. Beirne, Robert Roßbach, Michael Jetter, Peter Michler

Published Oct 1, 2008• 45 citations
Publisher

Abstract

The dark exciton state strongly affects the optical and quantum optical properties of flat InP/GaInP quantum dots. The exciton intensity drops sharply compared to the biexciton with rising pulsed laser excitation power while the opposite is true with temperature. Also, the decay rate is faster for the exciton than the biexciton and the dark-to-bright state spin flip is enhanced with temperature. Furthermore, long-lived dark state related memory effects are observed in second-order cross-correlation measurements between the exciton and biexciton and have been simulated using a rate-equation model.

DOI
10.1103/physrevlett.101.146402

Related papers

Influence of the Exciton Dark State on the Optical and Quantum Optical Properties of Single Quantum Dots

Matthias Reischle, Gareth J. Beirne, Robert Roßbach +4 more

The optical properties of single InP/GaInP quantum dots are strongly affected by the dark exciton state. The exciton intensity and decay time are strongly reduced at low temperatures. Additionally, memory effects have been observed in second‐order autocorrelation and cross‐correlation measurements that last over several excitation cycles. This behavior has been simulated using a rate equation model.

AIP conference proceedings•Jan 1, 2010•0 citations

Effects of biexcitons on exciton decoherence processes in InxGa1−xAs quantum dots

Hideki Gotoh, Hidehiko Kamada, Tadashi Saitoh +2 more

Exciton decoherence (dephasing) properties are examined for the effects of biexcitons in ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ quantum dots. The dephasing time of higher exciton states is measured from the linewidths of discrete exciton absorption lines by employing a high-energy-resolution microphotoluminescence excitation method in single isolated quantum dots. The excitation intensity dependence and temperature dependence of the exciton linewidth are used to consider the effects of exciton-biexciton and exciton-phonon interactions. The excitation intensity dependence reveals that the exciton-biexciton interaction contributes crucially to the exciton dephasing processes. A numerical calculation undertaken with a density-matrix method interprets this result as an enhancement of the power broadening effect due to coherent coupling between excitons and biexcitons. The temperature dependence indicates that the exciton-biexciton interaction dominates the exciton-phonon interaction below 40 K. These results provide a guideline for achieving a long-lived coherence in quantum dots, which is a key to the implementation of quantum information processing.

Physical Review B•Apr 27, 2004•19 citations

Single-Photon Emission from a Single InAs Quantum Dot

Dou Xiu-Ming, Baoquan Sun, Huang She-Song +2 more

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.

Chinese Physics Letters•Feb 1, 2008•6 citations

Correlation of Exciton and Biexciton from a Single InAs Quantum Dot

Yu-Long Li, Geng Chen, Jian‐Shun Tang +1 more

The peaks of exciton and biexciton from the single quantum dot (QD) micro-photoluminescence spectra are identified by observing the intensity of those peaks in relation to increasing excitation power. In order to further verify the properties of the exciton and biexciton, we perform auto- and cross correlation measurements. Using the former, we confirm the antibunching property of the signal light emitted from the single QD. Using cross correlation measurement, we verify that the exciton and biexciton emissions originate from the same QD and they are strongly correlated with each other. Lastly, we analyze the behavior of the cross correlation function in both the cases of saturated and unsaturated excitation of the QD.

Chinese Physics Letters•Sep 1, 2012•2 citations

Dynamics of InP∕(Ga,In)P quantum-dot single-photon emitters

A. K. Nowak, María Dolores Martín, E. Gallardo +8 more

The dynamics of single photon emitters based on InP/(Ga,In)P quantum dots (QDs) has been studied by time‐resolved photo luminescence (TRPL) and photon correlation spectroscopy (PCS) up to 50 K. The increase of temperature produces marked effects on the exciton photoluminescence (PL) decay time (τX) and on the anti‐bunching time (τR) in the second order photon correlation function. Both times are found to depend on the QD size. A competition of the thermally activated Dark‐to‐Bright (D→B) exciton transition and the thermal excitation of the carriers to‐ and from the QD give a good qualitative understanding of the observed results. Resonant excitation at the QD p‐states produces a marked decrease of τR together with the appearance of time bunching in a longer time scale.

AIP conference proceedings•Jan 1, 2011•0 citations

Exciton absorption properties of coherently coupled exciton-biexciton systems in quantum dots

Hideki Gotoh, Hidehiko Kamada, Tadashi Saitoh +2 more

Exciton-biexciton coherent coupling effects are examined in semiconductor quantum dots. The exciton absorption spectrum is measured with the microphotoluminescence excitation technique in a single InGaAs quantum dot. The spectrum changes from a Lorenztian-type line shape to an unusual dip-shaped line shape with increasing excitation intensities in a higher exciton state where there is a large oscillator strength between the exciton and biexciton states. The intensity dependence of the dip energy width clearly indicates that coherent Rabi oscillation occurs between the exciton and biexciton states. The absorption properties with excitation light of different polarizations show that the dip-shaped spectra only appear when there is a large biexciton state population with linear polarization. A theoretical analysis undertaken with the density matrix method agrees well with experimental results. This agreement reveals that exciton-biexciton coherent interactions lead to unusual absorption spectra and contribute crucially to the optical properties of quantum dots. The exciton-biexciton coherent effects provide a scheme for controlling four distinguishable states, which can be applied to a demonstration of quantum gate operations.

Physical Review B•May 1, 2005•23 citations
The dark exciton state strongly affects the optical and quantum optical properties of flat InP/GaInP quantum dots. The exciton intensity drops sharply compared to the biexciton with rising pulsed laser excitation power while the opposite is true with temperature. Also, the decay rate is faster for the exciton than the biexciton and the dark-to-bright state spin flip is enhanced with temperature. Furthermore, long-lived dark state related memory effects are observed in second-order cross-correlation measurements between the exciton and biexciton and have been simulated using a rate-equation model.
Exciton decoherence (dephasing) properties are examined for the effects of biexcitons in ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ quantum dots. The dephasing time of higher exciton states is measured from the linewidths of discrete exciton absorption lines by employing a high-energy-resolution microphotoluminescence excitation method in single isolated quantum dots. The excitation intensity dependence and temperature dependence of the exciton linewidth are used to consider the effects of exciton-biexciton and exciton-phonon interactions. The excitation intensity dependence reveals that the exciton-biexciton interaction contributes crucially to the exciton dephasing processes. A numerical calculation undertaken with a density-matrix method interprets this result as an enhancement of the power broadening effect due to coherent coupling between excitons and biexcitons. The temperature dependence indicates that the exciton-biexciton interaction dominates the exciton-phonon interaction below 40 K. These results provide a guideline for achieving a long-lived coherence in quantum dots, which is a key to the implementation of quantum information processing.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.
The peaks of exciton and biexciton from the single quantum dot (QD) micro-photoluminescence spectra are identified by observing the intensity of those peaks in relation to increasing excitation power. In order to further verify the properties of the exciton and biexciton, we perform auto- and cross correlation measurements. Using the former, we confirm the antibunching property of the signal light emitted from the single QD. Using cross correlation measurement, we verify that the exciton and biexciton emissions originate from the same QD and they are strongly correlated with each other. Lastly, we analyze the behavior of the cross correlation function in both the cases of saturated and unsaturated excitation of the QD.
The dynamics of single photon emitters based on InP/(Ga,In)P quantum dots (QDs) has been studied by time‐resolved photo luminescence (TRPL) and photon correlation spectroscopy (PCS) up to 50 K. The increase of temperature produces marked effects on the exciton photoluminescence (PL) decay time (τX) and on the anti‐bunching time (τR) in the second order photon correlation function. Both times are found to depend on the QD size. A competition of the thermally activated Dark‐to‐Bright (D→B) exciton transition and the thermal excitation of the carriers to‐ and from the QD give a good qualitative understanding of the observed results. Resonant excitation at the QD p‐states produces a marked decrease of τR together with the appearance of time bunching in a longer time scale.
Exciton-biexciton coherent coupling effects are examined in semiconductor quantum dots. The exciton absorption spectrum is measured with the microphotoluminescence excitation technique in a single InGaAs quantum dot. The spectrum changes from a Lorenztian-type line shape to an unusual dip-shaped line shape with increasing excitation intensities in a higher exciton state where there is a large oscillator strength between the exciton and biexciton states. The intensity dependence of the dip energy width clearly indicates that coherent Rabi oscillation occurs between the exciton and biexciton states. The absorption properties with excitation light of different polarizations show that the dip-shaped spectra only appear when there is a large biexciton state population with linear polarization. A theoretical analysis undertaken with the density matrix method agrees well with experimental results. This agreement reveals that exciton-biexciton coherent interactions lead to unusual absorption spectra and contribute crucially to the optical properties of quantum dots. The exciton-biexciton coherent effects provide a scheme for controlling four distinguishable states, which can be applied to a demonstration of quantum gate operations.