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Europhysics Letters (EPL)

Single photon emission dynamics of InP-InGaP quantum dots under p-shell excitation

A. K. Nowak, María Dolores Martín, Herko P. van der Meulen, Jose María Ripalda, Luisa González, Yolanda Gonzalez, L. Viña, J. M. Calleja

Published Sep 24, 2014• 0 citations
Publisher

Abstract

Single photon emitters based on InP/GaInP quantum dots have been studied under p -shell excitation by time-resolved photoluminescence and photon correlation spectroscopy. By tuning the excitation energy in resonance with quantum dot excited states, we observe a marked decrease of the antibunching time as a result of the increased excitation rate for decreasing energy detuning. A similar behavior is observed by increasing the pump power. The spectral dependence of the antibunching rate follows the energy profile of the excited state, as measured by photoluminescence excitation.

DOI
10.1209/0295-5075/108/17002

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Single photon emitters based on InP/GaInP quantum dots have been studied under p -shell excitation by time-resolved photoluminescence and photon correlation spectroscopy. By tuning the excitation energy in resonance with quantum dot excited states, we observe a marked decrease of the antibunching time as a result of the increased excitation rate for decreasing energy detuning. A similar behavior is observed by increasing the pump power. The spectral dependence of the antibunching rate follows the energy profile of the excited state, as measured by photoluminescence excitation.
The dynamics of single photon emitters based on InP/(Ga,In)P quantum dots (QDs) has been studied by time‐resolved photo luminescence (TRPL) and photon correlation spectroscopy (PCS) up to 50 K. The increase of temperature produces marked effects on the exciton photoluminescence (PL) decay time (τX) and on the anti‐bunching time (τR) in the second order photon correlation function. Both times are found to depend on the QD size. A competition of the thermally activated Dark‐to‐Bright (D→B) exciton transition and the thermal excitation of the carriers to‐ and from the QD give a good qualitative understanding of the observed results. Resonant excitation at the QD p‐states produces a marked decrease of τR together with the appearance of time bunching in a longer time scale.
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The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
In this paper we report recent results on single-photon generation with single InP and CdSe quantum dots. These dots produce single-photons on demand in the visible spectral range 510–690 nm. The emitted photoluminescence was characterized by measuring the autocorrelation function and by performing Fourier spectroscopy on several transitions in the quantum dot. We present the observation and interpretation of carrier trapping and recapture in InP quantum dots which leads to anomalies in the measured correlation functions. Our interpretation is confirmed by numerical simulations based on a rate equation model.
Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by non-resonant and resonant photoluminescence experiments in single QDs [1,2]. Up to now, all the measurements reported in the literature focus on the incoherent photoluminescence signal for achieving single photon emission. In this regime, the linewidth of the photoluminescence spectrum is limited to the so-called radiative limit. In this paper, we report on the resonant emission (RE) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [2]. We present an original type of single photon source based on the coherent laser light scattering by a single QD [3]. Besides the antibunching effect showing the nonclassical nature of the emitted light, we observe that the QD emission spectrum is determined by the spectrum of the resonant excitation laser. Figure (a,b,c) shows high-resolution measurements by Fourier transform spectroscopy of the RE where the data are fitted to the first-order correlation function g(1)(τ) of the RE of a two-level system. The inverse Fourier transform of the g(1)(τ) function allows a direct comparison of the different RE emission profiles in figure (d,e,f). By reducing the resonant excitation power, the Mollow triplet shrinks to a single narrow Lorentzian line, while the relative intensity of this narrow peak increases and tends to overwhelm the RE spectrum. This implies that single QDs can produce single photons with a coherence time that is not limited anymore by the QD electronic properties, resulting in an ultra-coherent character [3]. References [1] P. Michler et al, Science 290, 2282 (2000). [2] H. S. Nguyen et al, Phys. Rev. Lett. (accepted, in press). See arXiv 1109.4304. [3] H. S. Nguyen et al, Appl. Phys. Lett. 99, 261904 (2011).
We have studied the photoluminescence correlation from a single InAs/GaAs self-assembled Stranski–Krastanow quantum dot under continuous, as well as under pulsed excitation. Under weak continuous excitation, where the single dot luminescence is due primarily to single exciton recombinations, antibunching is observed in the single dot emission correlation. Under weak pulsed excitation, the number of photons emitted by the quantum dot per pulse is close to one. We present data obtained under both conditions and are able to show that devices based on single quantum dots can be used to generate single photons.