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Journal of Applied Physics

Single-photon emission from a type-B InP∕GaInP quantum dot

Gareth J. Beirne, Peter Michler, Michael Jetter, Heinz C. Schweizer

Published Nov 1, 2005• 29 citations
Publisher

Abstract

Type-B InP∕GaInP quantum dots are expected to exhibit a type-II electronic structure. Evidence for this is provided by the variation in decay time of the ensemble as a function of excitation power density. Photon correlation measurements were subsequently performed on a single type-B InP∕GaInP quantum dot using a Hanbury-Brown and Twiss setup [Nature 178, 1447 (1956)]. Autocorrelation measurements were carried out under both continuous-wave and pulsed excitation conditions with single-photon emission observed in each case. The continuous-wave measurements display a pronounced antibunching dip at zero time delay while pulsed measurements enable the triggered generation of single photons on demand at a wavelength of approximately 750 nm.

DOI
10.1063/1.2130887

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Type-B InP∕GaInP quantum dots are expected to exhibit a type-II electronic structure. Evidence for this is provided by the variation in decay time of the ensemble as a function of excitation power density. Photon correlation measurements were subsequently performed on a single type-B InP∕GaInP quantum dot using a Hanbury-Brown and Twiss setup [Nature 178, 1447 (1956)]. Autocorrelation measurements were carried out under both continuous-wave and pulsed excitation conditions with single-photon emission observed in each case. The continuous-wave measurements display a pronounced antibunching dip at zero time delay while pulsed measurements enable the triggered generation of single photons on demand at a wavelength of approximately 750 nm.
Single photon emitters based on InP/GaInP quantum dots have been studied under p -shell excitation by time-resolved photoluminescence and photon correlation spectroscopy. By tuning the excitation energy in resonance with quantum dot excited states, we observe a marked decrease of the antibunching time as a result of the increased excitation rate for decreasing energy detuning. A similar behavior is observed by increasing the pump power. The spectral dependence of the antibunching rate follows the energy profile of the excited state, as measured by photoluminescence excitation.
The authors report a “plug and play” source of single photons, with full integration to a single-mode optical fiber. One end of the fiber is attached to the top of an InGaAs∕GaAs quantum dot wafer. The other end is connected via a wavelength-division multiplexing system to two separate fibers: one for carrying excitation light and the other for emitted light. A Hanbury-Brown and Twiss [Nature (London) 77, 27 (1956)] measurement was performed on the emission from single excitons recombining in the quantum dots. A second-order correlation function at zero time delay of approximately 0.01 indicates a nearly ideal source of single photons. The maximum variation of peak position over 24days is less than 0.1nm.
We report the observation of antibunched emission from single self-assembled InAs quantum dots under various conditions. We have measured the correlation function of the photon emission pertaining to single emission lines from single quantum dots under continuous and pulsed laser excitation, as well as under continuous white light excitation. The measurements were performed under different excitation intensities at liquid helium temperatures on two samples with distinct structures. At higher temperatures (30 K), an antibunching dip was still observed. We have also observed antibunching on a second emission line in the quantum dot spectrum, attributed to the biexciton, demonstrating the possibility of generating photon pairs with a single quantum dot. Polarization correlations on the biexciton and exciton line were also measured in an attempt to generate entangled photon pairs.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.