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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Phase Conjugation In Semiconductor Lasers

Ian C. McMichael, M. Khoshnevisan, Pochi Yeh

Published Apr 22, 1988• 1 citation
Publisher

Abstract

We demonstrate phase-conjugate reflectivities on the order of 1000 at frequency detunings on the order of 0.5 GHz in intracavity nondegenerate four-wave mixing in a semiconductor laser. Our measurements show that, unlike a third-order nonlinearity, the conjugate reflectivity does not scale like the pump power squared, indicating that saturation and cavity effects are important in the generation of the conjugate.

DOI
10.1117/12.939695

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Optical phase conjugation through nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has attracted considerable attention in recent years since being first demonstrated by Nakajima and Frey[ 1 ]. Such interest arises due to the very high conjugate reflectivity of order 30-40dB which can be achieved owing to the amplifying effect of the semiconductor gain medium and cavity enhancement of mixing process. However, most previous experimental and theoretical work has placed emphasis on the weak signal case, where the injection signal acts only as a small perturbation of free-running laser diode. It is only very recently that a theoretical analysis of NDFWM in a semiconductor laser subject to strong probe injection power has been presented[2].

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We demonstrate phase-conjugate reflectivities on the order of 1000 at frequency detunings on the order of 0.5 GHz in intracavity nondegenerate four-wave mixing in a semiconductor laser. Our measurements show that, unlike a third-order nonlinearity, the conjugate reflectivity does not scale like the pump power squared, indicating that saturation and cavity effects are important in the generation of the conjugate.
Nearly degenerate four wave mixing (NDFWM) in semiconductor laser amplifiers has received attention recently as a means of efficiently generating phase conjugate beams. The high efficiency is due to two factors: (i) intracavity geometry enhances pump efficiency; (ii) an amplifying nonlinear medium results in high coupling efficiency. These factors have combined to give observed conjugate reflectivities of approximately 30/40 dB. The NDFWM process in semiconductor lasers is also very fast ( tau approximately 10/sup -9/s) being limited primarily by the interband relaxation time. Recent theoretical studies, however, have suggested that temporal gratings with THz frequencies may be supportable. It should be noted that NDFWM in semiconductor lasers is quite different from four wave mixing in most other media in that to a first approximation the gratings formed are purely temporal. Spatial effects are normally neglected, both for computational convenience and because carrier diffusion tends to wash out spatial holes. Previously, the authors demonstrated how the temporal nature of the wave mixing process could be exploited to produce a resonant enhancement in a two wave mixing geometry. In this paper, they examine a novel scheme for enhancing the phase conjugate reflectivity via pumping the device resonantly at the detuning frequency. They demonstrate that on resonance, conjugate reflectivities several orders of magnitude greater than those previously reported are possible. >
Experimental results are presented regarding the generation and bistable behavior of a conjugated signal obtained through intracavity nearly degenerate four-wave mixing in a semiconductor laser amplifier injected with both pump ($\ensuremath{\omega}$) and probe ($\ensuremath{\omega}\ensuremath{-}\ensuremath{\delta}\ensuremath{\omega}$) frequencies. Conjugated reflectivities at $\ensuremath{\omega}+\ensuremath{\delta}\ensuremath{\omega}$ larger than 500% with 35% efficiency together with bistable behavior in the three signals (pump, probe, and conjugated) are reported.
Summary form only given. Optical phase conjugation through nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has attracted considerable attention since being first demonstrated by Nakajima and Frey (1985). Such interest arises due to the very high conjugate reflectivity of order 30-40 dB which can be achieved owing to the amplifying effect of the semiconductor gain medium and cavity enhancement of the mixing process. The paper is focused on an experimental study of NDFWM in a two-section single cavity Fabry-Perot (TSSC FP) laser diode for different probe injection powers. We present results on the conjugate reflectivity dependence of the frequency detuning subject to different injection power. It is shown that the conjugate reflectivity is dependent on optical probe injection into either section of a TSSC FP laser diode, injection power and bias current condition.
Optical phase conjugation through nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has attracted considerable attention in recent years since being first demonstrated by Nakajima and Frey[ 1 ]. Such interest arises due to the very high conjugate reflectivity of order 30-40dB which can be achieved owing to the amplifying effect of the semiconductor gain medium and cavity enhancement of mixing process. However, most previous experimental and theoretical work has placed emphasis on the weak signal case, where the injection signal acts only as a small perturbation of free-running laser diode. It is only very recently that a theoretical analysis of NDFWM in a semiconductor laser subject to strong probe injection power has been presented[2].