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Frontiers in Optics

The single-photon detection and data acquisition for the quantum key distribution system

Xiuliang Chen, Chunyuan Zhou, Guang Wu, Hexiang Li, Heping Zeng

Published Jan 1, 2003• 0 citations
Publisher

Abstract

In our experiment, two InGaAs/InP avalanche photodiodes (APD) were used in the quantum key distribution (QKD) system for single-photon detection at telecom communication wavelength (1310/1550 nm). By using properly designed passive-quenching circuit, the photo-detection efficiency of the APD could reach 10% at 1550 nm. In order to decrease the dark count rate efficiently, we designed a coincident counting circuits for single-photon detection. Before the APD signals were sent to the signal processing circuit, the avalanche signals were amplified and shaped into the TTL pulses. In order to obtain an accurate and efficient data acquisition and to transfer synchronically several signals such as the TTL signals and pulses from Random generators, we designed a signal processing circuit with the parallel port whose speed limitation is about 100Kb/s. In our experiments of single-photon interference and quantum cryptography, the electronic designs presented us satisfactory performance and results. To achieve much higher speed for the data acquisition, we also employed the Universal Serial Bus System (USB2.0) to interface our single-photon avalanche detectors and random generators used in our QKD system, which was believed to improve the performance of QKD such as the key distribution speed.

DOI
10.1364/fio.2003.mt7

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In our experiment, two InGaAs/InP avalanche photodiodes (APD) were used in the quantum key distribution (QKD) system for single-photon detection at telecom communication wavelength (1310/1550 nm). By using properly designed passive-quenching circuit, the photo-detection efficiency of the APD could reach 10% at 1550 nm. In order to decrease the dark count rate efficiently, we designed a coincident counting circuits for single-photon detection. Before the APD signals were sent to the signal processing circuit, the avalanche signals were amplified and shaped into the TTL pulses. In order to obtain an accurate and efficient data acquisition and to transfer synchronically several signals such as the TTL signals and pulses from Random generators, we designed a signal processing circuit with the parallel port whose speed limitation is about 100Kb/s. In our experiments of single-photon interference and quantum cryptography, the electronic designs presented us satisfactory performance and results. To achieve much higher speed for the data acquisition, we also employed the Universal Serial Bus System (USB2.0) to interface our single-photon avalanche detectors and random generators used in our QKD system, which was believed to improve the performance of QKD such as the key distribution speed.
In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3×10-5 and 1.6×10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7×10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9×10-4 per pulse.
In order to improve the sensitivity of single-photon detection systems,InGaAs/InP avalanche photodiode(InGaAs/InP APD) is used in the design of single photon detector of quantum communication.Single photon detector bias generation circuit in gate pulse mode,single-photon signal amplification circuit,single photon signal detection circuit and temperature control module were realized.By selecting high-precision OP37 preamplifier and precision comparator AD8561,quantum efficiency was increased to 18.3%,dark count was controlled within 4.1 × 10-6/ns.
Using InGaAs/InP avalanche photodiodes as sensors and coaxial cables as reflection lines to reject spike signals, we have firstly employed the ``timing filtering'' gates to pick out avalanche signals and have realized the single photon detection at 1550 nm in the temperature range of thermoelectric cooling. A ratio of the dark count rate to the detection efficiency was obtained to be 9 × 10 −5 at 223 K. When the detector is applied to a practical quantum key distribution system, the transmission distance can reach 89.5 km and the repetition rate can reach 0.33 MHz.
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution. Encoding quantum information on single photons has enabled the realization of a number of unique communication schemes such as the implementation of the BB84 protocol for quantum key distribution 1 and quantum dense coding. 2 Furthermore, the implementation of these schemes using photons at telecommunication wavelengths has permitted their extension to fiber optic networks, 3,4 drastically increasing the practicality of quantum information processing. To date, the state of the art in commercially available single photon detection at telecommunication wavelengths (1550 nm) has been the thermo-electrically cooled InGaAs avalanche photodiode (APD). The cooled InGaAs APD is generally operated at T = -60°C in the reverse-biased Geiger mode. Though these detectors have been successfully implemented in operating QKD links in optical fiber, the InGaAs APD suffers from afterpulsing effects that limit the key exchange rates. New SPD (single photon detector) technologies based on superconducting materials are emerging that hold tremendous promise for drastically increasing the photon counting rate and eliminating dark noise.57 The SSPD consists of a NbN thin film (t ∼ 5 nm) patterned into a narrow (w ∼ 100 nm) microstrip meander that is ∼ 500μm in length. The detector is cooled to T < 4K in a closed cycle refrigeration unit and a bias current I b is supplied to the device just below the superconducting critical current (I c ). When a photon is incident upon the microstrip superconductivity is broken in the region local to photon absorption and a normal state region is formed in the device. The current passing through the device causes a measurable voltage pulse in the detector that can be amplified and shaped to act as an input for traditional logic circuitry. Due to the unique electronic bandstructure in a superconducting material the intrinsic response time of the device is on the order of picoseconds, so that the repetition rate may be increased above 1 GHz 8 without being susceptible to afterpulsing effects that plague the InGaAs APD. 9 To make a direct comparison between the InGaAs APD and the SSPD both were placed in a SPD characterization testbed to measure quantum efficiency and dark count rate at a variety of bias conditions. The QBER for a QKD link is calculated from the measured parameters and then compared to requirements for a provably secure QKD link. Following detector characterization, one of the nodes of the DARPA Quantum Network operated by BBN Technologies 3 utilized an SSPD in the receiver to transmit key material. The demonstration provides an in situ comparison between the InGaAs APD, normally operated in the BBN link, and the SSPD.
Modeling and design of a single photon detector and its various characteristics are presented. It is a type of avalanche photo diode (APD) designed to suit the requirements of a Quantum Key Distribution (QKD) detection system. The device is modeled to operate in a gated mode at liquid nitrogen temperature for minimum noise and maximum gain. Different types of APDs are compared for best performance. The APD is part of an optical communication link, which is a private channel to transmit the key signal. The encrypted message is sent via a public channel. The optical link operates at a wavelength of 1.55μm. The design is based on InGaAs with a quantum efficiency of more than 75% and a multiplication factor of 1000. The calculated dark current is below 10-12A with an overall signal to noise ratio better than 18 dB. The device sensitivity is better than -40 dBm, which is more than an order of magnitude higher than the dark current, corresponding to a detection sensitivity of two photons in pico-second pulses.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.