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Applied Physics Letters

Single Photon Detector Comparison in a Quantum Key Distribution Link Testbed

Jonathan L. Habif, David Pearson, Robert H. Hadfield, Robert E. Schwall, Sae Woo Nam, Aaron Miller

Published Oct 25, 2006• 0 citations
OpenAlex

Abstract

We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution. Encoding quantum information on single photons has enabled the realization of a number of unique communication schemes such as the implementation of the BB84 protocol for quantum key distribution 1 and quantum dense coding. 2 Furthermore, the implementation of these schemes using photons at telecommunication wavelengths has permitted their extension to fiber optic networks, 3,4 drastically increasing the practicality of quantum information processing. To date, the state of the art in commercially available single photon detection at telecommunication wavelengths (1550 nm) has been the thermo-electrically cooled InGaAs avalanche photodiode (APD). The cooled InGaAs APD is generally operated at T = -60°C in the reverse-biased Geiger mode. Though these detectors have been successfully implemented in operating QKD links in optical fiber, the InGaAs APD suffers from afterpulsing effects that limit the key exchange rates. New SPD (single photon detector) technologies based on superconducting materials are emerging that hold tremendous promise for drastically increasing the photon counting rate and eliminating dark noise.57 The SSPD consists of a NbN thin film (t ∼ 5 nm) patterned into a narrow (w ∼ 100 nm) microstrip meander that is ∼ 500μm in length. The detector is cooled to T < 4K in a closed cycle refrigeration unit and a bias current I b is supplied to the device just below the superconducting critical current (I c ). When a photon is incident upon the microstrip superconductivity is broken in the region local to photon absorption and a normal state region is formed in the device. The current passing through the device causes a measurable voltage pulse in the detector that can be amplified and shaped to act as an input for traditional logic circuitry. Due to the unique electronic bandstructure in a superconducting material the intrinsic response time of the device is on the order of picoseconds, so that the repetition rate may be increased above 1 GHz 8 without being susceptible to afterpulsing effects that plague the InGaAs APD. 9 To make a direct comparison between the InGaAs APD and the SSPD both were placed in a SPD characterization testbed to measure quantum efficiency and dark count rate at a variety of bias conditions. The QBER for a QKD link is calculated from the measured parameters and then compared to requirements for a provably secure QKD link. Following detector characterization, one of the nodes of the DARPA Quantum Network operated by BBN Technologies 3 utilized an SSPD in the receiver to transmit key material. The demonstration provides an in situ comparison between the InGaAs APD, normally operated in the BBN link, and the SSPD.

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Single photon detector comparison in a quantum key distribution test

Jonathan L. Habif, David Pearson, Robert H. Hadfield +3 more

We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Oct 18, 2006•3 citations

Single Photon Detection Using Frequency Up-Conversion with Pulse Pumping

Lijun Ma, Oliver Slattery, Xiao Hong Tang

In any quantum communication system, such as a quantum key distribution (QKD) system, data rates are mainly limited by the system clock rate and the various link losses. While the transmission clock rate is limited by the temporal resolution of the single-photon detectors, losses in a fiber-based quantum communication system can be minimized by operating in the near infrared range (NIR), at 1310 nm or 1550 nm. Commercially available InGaAs-based avalanche photo-diodes (APDs) can be operated as single-photon detectors in this wavelength range [Hadfield, 2009]. Due to the severe after-pulsing, InGaAs APDs are typically used in a gated mode and this can limit their application in high-speed quantum communications systems. Superconducting single-photon detectors (SSPDs) can work in the NIR wavelength range with good performance [Gol’tsman et al. 2001; Hadfield, 2009]. However, SSPDs require cryogenic temperatures, and are not widely available on the commercial market at present. In addition, InGaAs/InP based photomultiplier tubes (PMT) can operate in the NIR range, but its performance is limited by very low detection efficiency (1 % at 1600 nm) and large timing jitter (1.5 ns) [Hamamatsu, 2005]. Microchannel plates (MCP) are micro-capillary electron multipliers coated with an electron-emissive material and multiply photon-excited electrons from a photon cathode [Wiza, 1979]. MCPs usually have faster rise times and lower timing jitter than is achievable with PMTs. InGaAs MCPs can work in the NIR range. These MCPs, but are limited by low detection efficiency (~1 %) [Martin, J. & Hink P. 2003]. On the other hand, silicon based avalanche photo-diodes (Si APDs) are compact, relatively inexpensive, and can be operated at ambient temperatures with high detection efficiency and low noise in the visible or near-visible range. Unfortunately they do not work at wavelengths longer than 1000 nm. For those wavelengths, an up-conversion technique has been developed that uses sum-frequency generation (SFG) in a non-linear optical medium to convert the signal photons to a higher frequency (shorter wavelength) in the visible or near visible range. The up-converted photons can then be detected by a Si APD. Up-conversion detectors use commercially available components and devices, and are a practical solution for many applications in quantum communications. To date, several groups have successfully developed highly efficient up-conversion single-photon detectors in the nearinfrared range using periodically poled lithium niobate (PPLN) waveguides [Diamanti et al., 2005; Langrock et al., 2005; Thew et al., 2006; Tanzilli et al., 2005; Xu et al., 2007;] and bulk crystals [Vandevender & Kwiat, 2004].

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Single-photon detectors for practical quantum cryptography

Alberto Tosi, Franco Zappa, S. Cova

The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.

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Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 30, 2011•4 citations

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Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.

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Novel photon detection technologies for quantum communications

Masahide Sasaki, Akihiro Tanaka, Mikio Fujiwara +12 more

We present the latest results on two kinds of photon detectors: single photon detectors (SPDs) and photon number resolving detector (PNRD). We developed high speed and low noise SPDs using superconducting nano-wire (abbreviated by SNSPD) and semiconductor (InGaAs) avalanche photodiode (APD). The SNSPD system has totally four channels all of which have the detection eciency higher than 16% at 100Hz dark count rate. The InGaAs APD system also has four channels and the best performance is represented by the after-pulse probability of 0.61%, the dark count probability of 0.71×10-6 (~1kHz), and the detection eciency of 10.9%. Both systems were applied to wavelength division multiplexing quantum key distribution (WDM-QKD) operated at 1.2GHz repetition rate in a eld environment. The PNRD is made of superconducting transition edge sensor. It was applied to the implementation of quantum receiver which could beat the homodyne limit of the bit error rate of binary coherent states. We discuss future perspective of quantum communications with those photon detection technologies, including multi-user QKD networks and low-power high capacity communications.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•May 1, 2012•0 citations
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution. Encoding quantum information on single photons has enabled the realization of a number of unique communication schemes such as the implementation of the BB84 protocol for quantum key distribution 1 and quantum dense coding. 2 Furthermore, the implementation of these schemes using photons at telecommunication wavelengths has permitted their extension to fiber optic networks, 3,4 drastically increasing the practicality of quantum information processing. To date, the state of the art in commercially available single photon detection at telecommunication wavelengths (1550 nm) has been the thermo-electrically cooled InGaAs avalanche photodiode (APD). The cooled InGaAs APD is generally operated at T = -60°C in the reverse-biased Geiger mode. Though these detectors have been successfully implemented in operating QKD links in optical fiber, the InGaAs APD suffers from afterpulsing effects that limit the key exchange rates. New SPD (single photon detector) technologies based on superconducting materials are emerging that hold tremendous promise for drastically increasing the photon counting rate and eliminating dark noise.57 The SSPD consists of a NbN thin film (t ∼ 5 nm) patterned into a narrow (w ∼ 100 nm) microstrip meander that is ∼ 500μm in length. The detector is cooled to T < 4K in a closed cycle refrigeration unit and a bias current I b is supplied to the device just below the superconducting critical current (I c ). When a photon is incident upon the microstrip superconductivity is broken in the region local to photon absorption and a normal state region is formed in the device. The current passing through the device causes a measurable voltage pulse in the detector that can be amplified and shaped to act as an input for traditional logic circuitry. Due to the unique electronic bandstructure in a superconducting material the intrinsic response time of the device is on the order of picoseconds, so that the repetition rate may be increased above 1 GHz 8 without being susceptible to afterpulsing effects that plague the InGaAs APD. 9 To make a direct comparison between the InGaAs APD and the SSPD both were placed in a SPD characterization testbed to measure quantum efficiency and dark count rate at a variety of bias conditions. The QBER for a QKD link is calculated from the measured parameters and then compared to requirements for a provably secure QKD link. Following detector characterization, one of the nodes of the DARPA Quantum Network operated by BBN Technologies 3 utilized an SSPD in the receiver to transmit key material. The demonstration provides an in situ comparison between the InGaAs APD, normally operated in the BBN link, and the SSPD.
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution.
In any quantum communication system, such as a quantum key distribution (QKD) system, data rates are mainly limited by the system clock rate and the various link losses. While the transmission clock rate is limited by the temporal resolution of the single-photon detectors, losses in a fiber-based quantum communication system can be minimized by operating in the near infrared range (NIR), at 1310 nm or 1550 nm. Commercially available InGaAs-based avalanche photo-diodes (APDs) can be operated as single-photon detectors in this wavelength range [Hadfield, 2009]. Due to the severe after-pulsing, InGaAs APDs are typically used in a gated mode and this can limit their application in high-speed quantum communications systems. Superconducting single-photon detectors (SSPDs) can work in the NIR wavelength range with good performance [Gol’tsman et al. 2001; Hadfield, 2009]. However, SSPDs require cryogenic temperatures, and are not widely available on the commercial market at present. In addition, InGaAs/InP based photomultiplier tubes (PMT) can operate in the NIR range, but its performance is limited by very low detection efficiency (1 % at 1600 nm) and large timing jitter (1.5 ns) [Hamamatsu, 2005]. Microchannel plates (MCP) are micro-capillary electron multipliers coated with an electron-emissive material and multiply photon-excited electrons from a photon cathode [Wiza, 1979]. MCPs usually have faster rise times and lower timing jitter than is achievable with PMTs. InGaAs MCPs can work in the NIR range. These MCPs, but are limited by low detection efficiency (~1 %) [Martin, J. & Hink P. 2003]. On the other hand, silicon based avalanche photo-diodes (Si APDs) are compact, relatively inexpensive, and can be operated at ambient temperatures with high detection efficiency and low noise in the visible or near-visible range. Unfortunately they do not work at wavelengths longer than 1000 nm. For those wavelengths, an up-conversion technique has been developed that uses sum-frequency generation (SFG) in a non-linear optical medium to convert the signal photons to a higher frequency (shorter wavelength) in the visible or near visible range. The up-converted photons can then be detected by a Si APD. Up-conversion detectors use commercially available components and devices, and are a practical solution for many applications in quantum communications. To date, several groups have successfully developed highly efficient up-conversion single-photon detectors in the nearinfrared range using periodically poled lithium niobate (PPLN) waveguides [Diamanti et al., 2005; Langrock et al., 2005; Thew et al., 2006; Tanzilli et al., 2005; Xu et al., 2007;] and bulk crystals [Vandevender & Kwiat, 2004].
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.
Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.
Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.
We present the latest results on two kinds of photon detectors: single photon detectors (SPDs) and photon number resolving detector (PNRD). We developed high speed and low noise SPDs using superconducting nano-wire (abbreviated by SNSPD) and semiconductor (InGaAs) avalanche photodiode (APD). The SNSPD system has totally four channels all of which have the detection eciency higher than 16% at 100Hz dark count rate. The InGaAs APD system also has four channels and the best performance is represented by the after-pulse probability of 0.61%, the dark count probability of 0.71×10-6 (~1kHz), and the detection eciency of 10.9%. Both systems were applied to wavelength division multiplexing quantum key distribution (WDM-QKD) operated at 1.2GHz repetition rate in a eld environment. The PNRD is made of superconducting transition edge sensor. It was applied to the implementation of quantum receiver which could beat the homodyne limit of the bit error rate of binary coherent states. We discuss future perspective of quantum communications with those photon detection technologies, including multi-user QKD networks and low-power high capacity communications.