The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.
Two approaches to single-photon detection at telecom wavelengths have been investigated, using semiconductor and superconductor technologies. The low temperature operation of free-running InGaAs/InP negative feedback avalanche diodes (NFADs) was studied, demonstrating that they can operate with an extremely low dark count rate, which opens up a host of new applications. Secondly, superconducting nanowire single-photon detectors (SNSPDs) based on amorphous materials were developed, fabricated and characterized. These detectors are highly attractive because they can achieve excellent attributes simultaneously, such as high efficiency, low noise, good temporal resolution, no afterpulsing and high count rates. Finally, it was demonstrated that the use of NFADs can enable record distance quantum key distribution (QKD) over 307 km of optical fiber. A next generation QKD system has been proposed and numerically analyzed, aiming at extending the record distance by an additional 100 km and increasing the state-of-the-art secret key rate by over an order of magnitude.
Experimental results obtained with silicon single photon avalanche diodes (SPADs) in quantum key distribution (QKD) at short wavelengths reveal remarkable potential for application in local area networks (LAN) and for free-space transmission at high rate. Actual application prospects, however, depend on the performance level and on the suitability of practical systems using the available silicon SPAD devices. They can be essentially divided in two groups: planar p-n junction structures with a thin depletion layer (typically 1 μm); and reach-through structures with a thick depletion layer (from 20 μm to 150μm). The physical mechanisms that control the device behaviour were investigated and the effect on the key parameters of the detector (quantum detection efficiency, dark counting rate, afterpulsing probability and photon-timing jitter) were thoroughly assessed. A quantitative analysis was made of the influence of such parameters on the quantum bit error rate (QBER). Actual parameters were measured and the attainable performance and system suitability of the two device types evaluated. Comparable performance is obtained, but from a system viewpoint thin SPADs appear inherently better suited to high-rate QKD applications, because of their faster response time, ruggedness, low voltage, low power dissipation and fabrication technology, which is simple, efficient, economical and compatible with monolithic integration of detector and associated circuits.
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution. Encoding quantum information on single photons has enabled the realization of a number of unique communication schemes such as the implementation of the BB84 protocol for quantum key distribution 1 and quantum dense coding. 2 Furthermore, the implementation of these schemes using photons at telecommunication wavelengths has permitted their extension to fiber optic networks, 3,4 drastically increasing the practicality of quantum information processing. To date, the state of the art in commercially available single photon detection at telecommunication wavelengths (1550 nm) has been the thermo-electrically cooled InGaAs avalanche photodiode (APD). The cooled InGaAs APD is generally operated at T = -60°C in the reverse-biased Geiger mode. Though these detectors have been successfully implemented in operating QKD links in optical fiber, the InGaAs APD suffers from afterpulsing effects that limit the key exchange rates. New SPD (single photon detector) technologies based on superconducting materials are emerging that hold tremendous promise for drastically increasing the photon counting rate and eliminating dark noise.57 The SSPD consists of a NbN thin film (t ∼ 5 nm) patterned into a narrow (w ∼ 100 nm) microstrip meander that is ∼ 500μm in length. The detector is cooled to T < 4K in a closed cycle refrigeration unit and a bias current I b is supplied to the device just below the superconducting critical current (I c ). When a photon is incident upon the microstrip superconductivity is broken in the region local to photon absorption and a normal state region is formed in the device. The current passing through the device causes a measurable voltage pulse in the detector that can be amplified and shaped to act as an input for traditional logic circuitry. Due to the unique electronic bandstructure in a superconducting material the intrinsic response time of the device is on the order of picoseconds, so that the repetition rate may be increased above 1 GHz 8 without being susceptible to afterpulsing effects that plague the InGaAs APD. 9 To make a direct comparison between the InGaAs APD and the SSPD both were placed in a SPD characterization testbed to measure quantum efficiency and dark count rate at a variety of bias conditions. The QBER for a QKD link is calculated from the measured parameters and then compared to requirements for a provably secure QKD link. Following detector characterization, one of the nodes of the DARPA Quantum Network operated by BBN Technologies 3 utilized an SSPD in the receiver to transmit key material. The demonstration provides an in situ comparison between the InGaAs APD, normally operated in the BBN link, and the SSPD.
Modeling and design of a single photon detector and its various characteristics are presented. It is a type of avalanche photo diode (APD) designed to suit the requirements of a Quantum Key Distribution (QKD) detection system. The device is modeled to operate in a gated mode at liquid nitrogen temperature for minimum noise and maximum gain. Different types of APDs are compared for best performance. The APD is part of an optical communication link, which is a private channel to transmit the key signal. The encrypted message is sent via a public channel. The optical link operates at a wavelength of 1.55μm. The design is based on InGaAs with a quantum efficiency of more than 75% and a multiplication factor of 1000. The calculated dark current is below 10-12A with an overall signal to noise ratio better than 18 dB. The device sensitivity is better than -40 dBm, which is more than an order of magnitude higher than the dark current, corresponding to a detection sensitivity of two photons in pico-second pulses.
A brief overview is given of single photon detector performance requirements for quantum cryptography applications. The analysis is made with respect to restrictions necessary to secure the quantum key distribution channel. InGaAs/InP avalanche photodiode performance is analysed for single photon counting at 1550 nm. Quantum efficiency, dark current and afterpulsing probability (for times up to 100μs after an initial avalanche) are studied in a wider temperature range than previously reported (0deg; C to –80deg;C). We show that photon counting is a bottle-neck in current quantum key distribution systems and provides the source for future performance improvement.