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Journal of Modern Optics

Single photon counting at telecom wavelength and quantum key distribution

Alexei S. Trifonov, Darius Subacius, Audrius Berzanskis, Anton Zavriyev

Published Jan 1, 2004• 52 citations
Publisher

Abstract

A brief overview is given of single photon detector performance requirements for quantum cryptography applications. The analysis is made with respect to restrictions necessary to secure the quantum key distribution channel. InGaAs/InP avalanche photodiode performance is analysed for single photon counting at 1550 nm. Quantum efficiency, dark current and afterpulsing probability (for times up to 100μs after an initial avalanche) are studied in a wider temperature range than previously reported (0deg; C to –80deg;C). We show that photon counting is a bottle-neck in current quantum key distribution systems and provides the source for future performance improvement.

DOI
10.1080/09500340408235281

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A brief overview is given of single photon detector performance requirements for quantum cryptography applications. The analysis is made with respect to restrictions necessary to secure the quantum key distribution channel. InGaAs/InP avalanche photodiode performance is analysed for single photon counting at 1550 nm. Quantum efficiency, dark current and afterpulsing probability (for times up to 100μs after an initial avalanche) are studied in a wider temperature range than previously reported (0deg; C to –80deg;C). We show that photon counting is a bottle-neck in current quantum key distribution systems and provides the source for future performance improvement.
Using InGaAs/InP avalanche photodiodes as sensors and coaxial cables as reflection lines to reject spike signals, we have firstly employed the ``timing filtering'' gates to pick out avalanche signals and have realized the single photon detection at 1550 nm in the temperature range of thermoelectric cooling. A ratio of the dark count rate to the detection efficiency was obtained to be 9 × 10 −5 at 223 K. When the detector is applied to a practical quantum key distribution system, the transmission distance can reach 89.5 km and the repetition rate can reach 0.33 MHz.
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of 2.8 × 10−5 per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60°C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 km.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.