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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode

Guang Wu, Chunyuan Zhou, Xiuliang Chen, Xianghe Li, Heping Zeng

Published May 12, 2004• 2 citations
Publisher

Abstract

In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3×10-5 and 1.6×10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7×10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9×10-4 per pulse.

DOI
10.1117/12.520253

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In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3×10-5 and 1.6×10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7×10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9×10-4 per pulse.
In our experiment, two InGaAs/InP avalanche photodiodes (APD) were used in the quantum key distribution (QKD) system for single-photon detection at telecom communication wavelength (1310/1550 nm). By using properly designed passive-quenching circuit, the photo-detection efficiency of the APD could reach 10% at 1550 nm. In order to decrease the dark count rate efficiently, we designed a coincident counting circuits for single-photon detection. Before the APD signals were sent to the signal processing circuit, the avalanche signals were amplified and shaped into the TTL pulses. In order to obtain an accurate and efficient data acquisition and to transfer synchronically several signals such as the TTL signals and pulses from Random generators, we designed a signal processing circuit with the parallel port whose speed limitation is about 100Kb/s. In our experiments of single-photon interference and quantum cryptography, the electronic designs presented us satisfactory performance and results. To achieve much higher speed for the data acquisition, we also employed the Universal Serial Bus System (USB2.0) to interface our single-photon avalanche detectors and random generators used in our QKD system, which was believed to improve the performance of QKD such as the key distribution speed.
Using InGaAs/InP avalanche photodiodes as sensors and coaxial cables as reflection lines to reject spike signals, we have firstly employed the ``timing filtering'' gates to pick out avalanche signals and have realized the single photon detection at 1550 nm in the temperature range of thermoelectric cooling. A ratio of the dark count rate to the detection efficiency was obtained to be 9 × 10 −5 at 223 K. When the detector is applied to a practical quantum key distribution system, the transmission distance can reach 89.5 km and the repetition rate can reach 0.33 MHz.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.