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Physical review. B, Solid state

Investigation of Microwave-Induced dc Voltages across Unbiased Josephson Tunnel Junctions

J. T. Chen, R. J. Todd, Y.W. Kim

Published Mar 1, 1972• 48 citations
Publisher

Abstract

We have studied the power dependence of the microwave-induced dc voltages across "unbiased" Pb---Pb oxide---Pb Josephson tunnel junctions and found a systematic dependence. We have also found that the Josephson effect in the form of induced quantum voltages was observable in a large dc magnetic field as high as 0.5 kG, about one-half of the ${H}_{c2}$ of the superconducting Pb film.

DOI
10.1103/physrevb.5.1843

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Japanese Journal of Applied Physics•Sep 1, 1995•2 citations
We have studied the power dependence of the microwave-induced dc voltages across "unbiased" Pb---Pb oxide---Pb Josephson tunnel junctions and found a systematic dependence. We have also found that the Josephson effect in the form of induced quantum voltages was observable in a large dc magnetic field as high as 0.5 kG, about one-half of the Hc2{H}_{c2}Hc2​ of the superconducting Pb film.
A previously published analysis of the magnetic field variation of the reflected microwave power from small unbiased Pb-O-Pb Josephson junctions found strong temperature dependences for the basic tunnel parameters. We reanalyze those measurements employing independent variables, compensating for spurious external reflections, and accounting for noise reduction of the dc critical current. The cosφ amplitude ζ is positive near Tc and becomes negative at lower temperatures. In contrast to the previous work ζ is less sharply peaked, the junction rf resistance varies smoothly, and the capacitance is temperature independent. Our results clearly disagree with recent theoretical work.
Experimental and theoretical studies are made of the effect of a microwave on dc current-voltage characteristics of long Josephson junctions. In the case of zero external dc current, dc voltages were observed when the microwave was applied to the junctions. By comparing the observed magnetic-field and microwave-power dependences with theoretical results, it is concluded that these dc voltages resulted from vortex motion which was induced by the applied microwave. When the junctions were in a flux-flow state caused by the external current, a good agreement between theory and experiment concerning the microwave-power and magnetic-field dependences of Shapiro steps demonstrates that an almost ideal traveling-wave type coupling between the applied microwave and a moving vortex array took place in the long Josephson junctions.
We have fabricated an artificial BaPb1- x Bi x O3 grain boundary tunnel junction on a SrTiO3 bicrystal substrate. Current-voltage characteristics exhibit supercurrent and quasi-particle tunneling which is commonly observed for superconductor-insulator-superconductor (SIS) type junctions. A Shapiro step is observed for a junction with a large area under microwave radiation. On the other hand, microwave-induced dc voltages at zero bias current are observed for a narrow junction. This dependence on the junction width indicates that generation of the microwave-induced voltages is related to normal resistance or capacitance of a junction.