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Japanese Journal of Applied Physics

Microwave-Induced dc Voltages in BaPb1-xBixO3 Bicrystal Josephson Junctions

Hiroyuki Fuke, Kunihiko Hayashi, Yukio Kanke, Youichi Enomoto

Published Sep 1, 1995• 2 citations
Publisher

Abstract

We have fabricated an artificial BaPb1- x Bi x O3 grain boundary tunnel junction on a SrTiO3 bicrystal substrate. Current-voltage characteristics exhibit supercurrent and quasi-particle tunneling which is commonly observed for superconductor-insulator-superconductor (SIS) type junctions. A Shapiro step is observed for a junction with a large area under microwave radiation. On the other hand, microwave-induced dc voltages at zero bias current are observed for a narrow junction. This dependence on the junction width indicates that generation of the microwave-induced voltages is related to normal resistance or capacitance of a junction.

DOI
10.1143/jjap.34.l1205

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We have fabricated an artificial BaPb1- x Bi x O3 grain boundary tunnel junction on a SrTiO3 bicrystal substrate. Current-voltage characteristics exhibit supercurrent and quasi-particle tunneling which is commonly observed for superconductor-insulator-superconductor (SIS) type junctions. A Shapiro step is observed for a junction with a large area under microwave radiation. On the other hand, microwave-induced dc voltages at zero bias current are observed for a narrow junction. This dependence on the junction width indicates that generation of the microwave-induced voltages is related to normal resistance or capacitance of a junction.
Tl-2212 bicrystal Josephson junctions on SrTiO3 substrates have been fabricated. The I-V characteristic of a Josephson junction under microwave radiation were measured，and microwave induced steps were observed in accordance with the Josephson frequency-voltage relationship. The RCSJ model including noise of bicrystal Josephson junction was constructed through numerical simulation，and the results of simulation were in good agreement with the experimental data. Using the RCSJ model，we investigated the effect of noise on the dynamic characteristics of Josephson junction through simulation，and explained the phenomenon of reduced height and increased breadth of the minima of microwave induced steps. We proposed that the effective noise temperature should be the sum of operational temperature and equivalent temperature of the external noise.
We report an experimental and theoretical study of low-voltage resistive states observed in small tunnel Josephson junctions subject to microwave radiation. The observed features result from Shapiro steps in the current–voltage characteristics and appear when both thermal fluctuations and high frequency dissipation are strong. Without microwave radiation, Josephson junctions have a phase diffusion supercurrent branch characterized by a finite small resistance and hysteretic switching to a higher voltage range under these conditions. When microwave radiation is applied, three different types of resistive states are observed in the current-voltage characteristics. First, a phase diffusion branch steadily evolves and its maximum voltage Vm increases with the microwave power. Another interesting observed feature is a zero-crossing resistive state characterized by a negative resistance. Finally, we find that the low-voltage resistive state can split into numerous hysteretic fine branches resembling incoherent Shapiro-like steps. The appearance of a particular resistive state depends on the interrelations among the Josephson energy EJ, the energy kBT of thermal fluctuations, and the microwave frequency ω. A theoretical analysis based on incoherent multi-photon absorption by a junction biased in the Josephson phase diffusion regime is in good agreement with the experimental observations.
Quantized voltage across the unbiased terminals of a bicrystal YBa 2 Cu 3 O 7 dc SQUID exposed to microwave radiation has been observed at 77 K. Using this voltage as an indication of the microwave power coupled to the junctions, we identified three distinct regions in the I – V curves as the microwave power was tuned, similar to those reported for low- T c SQUID. Pronounced double period steps were observed when the microwave radiation power was high enough to suppress the dc Josephson current completely. Half-integer steps also appeared as the applied dc-magnetic flux was close to half-integers of flux quanta. The experimental phenomenon was explained based on the resistively shunted Josephson junction model.
Experimental and theoretical studies are made of the effect of a microwave on dc current-voltage characteristics of long Josephson junctions. In the case of zero external dc current, dc voltages were observed when the microwave was applied to the junctions. By comparing the observed magnetic-field and microwave-power dependences with theoretical results, it is concluded that these dc voltages resulted from vortex motion which was induced by the applied microwave. When the junctions were in a flux-flow state caused by the external current, a good agreement between theory and experiment concerning the microwave-power and magnetic-field dependences of Shapiro steps demonstrates that an almost ideal traveling-wave type coupling between the applied microwave and a moving vortex array took place in the long Josephson junctions.
A Ba/sub 1-x/K/sub x/BiO/sub 3/ (BKBO) grain boundary junction formed on a MgO bicrystal substrate showed a superconductor-insulator-superconductor (SIS) behavior with a sharp gap structure and a Josephson current. A 270 GHz millimeter wave mixing in a BKBO junction was performed by using the quasi optical technique. A log-periodic antenna, a hyperhemispherical MgO lens and a Teflon lens were used in order to improve coupling for millimeter wave. The IF outputs have some peaks depending on the photon assisted tunneling steps. This is the first time that quasi-particle mixing could be done in an oxide superconductor.
The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6–1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2–0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction.