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Japanese Journal of Applied Physics

All-Optical Inverted Operational Amplifier Derived from the Negative Nonlinear Absorption Effect

Yoshinobu Maeda

Published Jul 1, 2000• 1 citation
Publisher

Abstract

An all-optical inverted operational amplifier derived from the negative nonlinear absorption effect in an erbium-yttrium aluminum garnet crystal was realized using an erbium-doped fiber amplifier and a feedback ring resonator. The inverted output modulation degree depended on the fiber amplifier gain and increased abruptly at a gain of more than 25 dB. The maximum value of the output modulation degree was 91% when the input modulation degree was 52%. The inverted output power was amplified by approximately 28 times the input power of 25 µW. A NOR-type logic gate operation was demonstrated using two optical signals of 1.53 µm.

DOI
10.1143/jjap.39.l738

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An all-optical inverted operational amplifier derived from the negative nonlinear absorption effect in an erbium-yttrium aluminum garnet crystal was realized using an erbium-doped fiber amplifier and a feedback ring resonator. The inverted output modulation degree depended on the fiber amplifier gain and increased abruptly at a gain of more than 25 dB. The maximum value of the output modulation degree was 91% when the input modulation degree was 52%. The inverted output power was amplified by approximately 28 times the input power of 25 µW. A NOR-type logic gate operation was demonstrated using two optical signals of 1.53 µm.
Using a modulated laser diode, dependence of a negative nonlinear absorption effect on both the wavelength and the sample length was observed in an erbium doped yttrium aluminum garnet crystal which has a four-level energy structure. The effect was seen at wavelengths of 787.4 to 788.6 nm in excited state absorption spectra which showed a peak corresponding to the transition from 4 I 13/2 to 2 H 11/2 in Er3+ for sample lengths greater than 2.0 mm. An optical signal inverter which had a negative input-output characteristic was realized using the negative nonlinear absorption effect.
An all-optical inverter derived from the negative nonlinear absorption effect was demonstrated in erbium–yttrium aluminum garnet crystals using 1.53 μm laser diode. The effect was obtained at wavelengths of 1532 to 1534 nm in absorption spectra corresponding to the transition from the I15/24 to the I13/24 levels in Er3+ for sample lengths greater than 1.0 mm. The reversed-phase transmitted wave forms were observed at modulation frequencies from 1 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a four-level system of the Er3+ ion.
A negative input-output characteristic was obtained in an erbium-doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I−4I) and between two other excited levels (4I−2H) in Er3+. It occurred at a wavelength between 786.6 and 788.4 nm by variation of the incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited-state absorption from 4I to 2H, its spectra matching the wavelength dependence of the incident laser In addition, optical signal inverter phenomenon was observed using a laser diode modulated at 10 MHz. By considering multiple excited-state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 120(4): 74–80, 1997
An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.
A negative input-output characteristic was obtained in an erbium doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I15/2-4I9/2) and between two other excited levels (4I13/2-2H11/2) in Er3+. It was caused at the wavelength between 786.6 and 788.4nm by the variation of incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited state absorption from 4I13/2 to 2H11/2. Because its spectra match the wavelength dependence of the incident laser. In addition, optical signal inverter phenomenon was observed using a laser diode modulated with 10 MHz. By considering multiple excited state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect.