IEEJ Transactions on Electronics Information and Systems
Optical Signal Inverter Phenomena using Negative Nonlinear Absorption Effect
Yoshinobu Maeda, Seiichi Ikeda, Takao Sakakibara, Masatoshi Migitaka
Abstract
A negative input-output characteristic was obtained in an erbium doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I15/2-4I9/2) and between two other excited levels (4I13/2-2H11/2) in Er3+. It was caused at the wavelength between 786.6 and 788.4nm by the variation of incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited state absorption from 4I13/2 to 2H11/2. Because its spectra match the wavelength dependence of the incident laser. In addition, optical signal inverter phenomenon was observed using a laser diode modulated with 10 MHz. By considering multiple excited state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect.