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Electrical Engineering in Japan

Optical signal inversion phenomena due to negative nonlinear absorption effect

Yoshinobu Maeda, Seiichi Ikeda, Takao Sakakibara, Masatoshi Migitaka

Published Sep 1, 1997• 0 citations
Publisher

Abstract

A negative input-output characteristic was obtained in an erbium-doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I−4I) and between two other excited levels (4I−2H) in Er3+. It occurred at a wavelength between 786.6 and 788.4 nm by variation of the incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited-state absorption from 4I to 2H, its spectra matching the wavelength dependence of the incident laser In addition, optical signal inverter phenomenon was observed using a laser diode modulated at 10 MHz. By considering multiple excited-state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 120(4): 74–80, 1997

DOI
10.1002/(sici)1520-6416(199709)120:4<74::aid-eej10>3.0.co;2-w

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Applied Physics Letters•Mar 22, 1999•13 citations
A negative input-output characteristic was obtained in an erbium-doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I−4I) and between two other excited levels (4I−2H) in Er3+. It occurred at a wavelength between 786.6 and 788.4 nm by variation of the incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited-state absorption from 4I to 2H, its spectra matching the wavelength dependence of the incident laser In addition, optical signal inverter phenomenon was observed using a laser diode modulated at 10 MHz. By considering multiple excited-state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 120(4): 74–80, 1997
A negative input-output characteristic was obtained in an erbium doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I15/2-4I9/2) and between two other excited levels (4I13/2-2H11/2) in Er3+. It was caused at the wavelength between 786.6 and 788.4nm by the variation of incident laser intensity in the intensity range of 60 nW/cm2 to 100 W/cm2. It is considered that an enhanced absorption occurs due to the excited state absorption from 4I13/2 to 2H11/2. Because its spectra match the wavelength dependence of the incident laser. In addition, optical signal inverter phenomenon was observed using a laser diode modulated with 10 MHz. By considering multiple excited state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect.
A negative input-output characteristic was obtained in an erbium doped yttrium aluminum garnet crystal which has multiple-level energy structure: absorption can occur between a ground level and an excited level (4I15/2-4I9/2) and between two other excited levels (4I13/2-2H11/2) in Er3+. According as modulation degrees of the incident laser decreased, the transmitted laser waveform was distorted and eventually inverted against the incident one in case that the modulation degree was less than 0.5. It is suggested that an enhanced absorption phenomenon takes place since the excited state absorption from 4I13/2 to 2H11/2 and that a 4S3/2 level plays an important role. Because the time-dependence of this phenomenon matches a life time of the 4S3/2 level. By considering multiple excited state absorption in detail, active functions such as an optical signal inverter could be derived from the negative nonlinear absorption effect.
Using a modulated laser diode, dependence of a negative nonlinear absorption effect on both the wavelength and the sample length was observed in an erbium doped yttrium aluminum garnet crystal which has a four-level energy structure. The effect was seen at wavelengths of 787.4 to 788.6 nm in excited state absorption spectra which showed a peak corresponding to the transition from 4 I 13/2 to 2 H 11/2 in Er3+ for sample lengths greater than 2.0 mm. An optical signal inverter which had a negative input-output characteristic was realized using the negative nonlinear absorption effect.
There has been considerable interest in all-optical devices for achieving the high-speed and parallel processing. Up to the present the amount of absorption in any absorption process has been considered to be proportional to the incident light intensity until in some cases saturation occurs [1]. Recently we observed experimentally negative nonlinear absorption (NNA) phenomena which cause transmission to decrease as the laser intensity increase and confirmed that the transmitted laser intensity with the variation of incident laser showed negative nonlinear (i. e. Maeda's effect) [2, 3]. In this report we demonstrate that the net quantity of light absorbed in an erbium doped yttrium aluminum garnet crystal can be a negative function of the incident laser intensity. The absorbing material has a four-level energy structure: absorption can occur between a ground level and an excited level and between two other excited levels. The input-output characteristic has a negative region due to the absorption between excited states.
Dependence of the negative nonlinear absorption effect on both modulation frequency and sample temperature was investigated in an erbium yttrium aluminum garnet crystal. The phase of transmitted laser was opposite to that of the incident laser at modulation frequencies lower than 1 MHz. However, the transmitted laser waveform was asymmetrical above 5 MHz and the time-dependence characteristics agreed with the lifetime of the 4S3/2 level in Er3+. At temperatures lower than 25 K, enhanced absorption was weakened because the number of phonons decreased due to low temperature. It is suggested that the negative nonlinear absorption effect occurred due to enhanced absorption in three excited states. © 1998 Scripta Technica. Electron Comm Jpn Pt 2, 80(6): 43–48, 1997
An all-optical inverter derived from the negative nonlinear absorption effect was demonstrated in erbium–yttrium aluminum garnet crystals using 1.53 μm laser diode. The effect was obtained at wavelengths of 1532 to 1534 nm in absorption spectra corresponding to the transition from the I15/24 to the I13/24 levels in Er3+ for sample lengths greater than 1.0 mm. The reversed-phase transmitted wave forms were observed at modulation frequencies from 1 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a four-level system of the Er3+ ion.