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International Conference on Photonics in Switching

All-Optical NAND Logic Gate Operating at 1.53 µ m in Erbium Lutetium Aluminum Garnets

Yoshinobu Maeda

Published Jan 1, 2000• 0 citations
Publisher

Abstract

An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.

DOI
10.1364/ps.1999.170

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Dependence of the negative nonlinear absorption effect on both modulation degree and frequency was investigated in erbium yttrium aluminum garnet crystals. For a modulation frequency of 1 MHz, two peaks, A and B, were observed in the transmitted waveform. With a decreasing modulation degree, peak C which consists of peaks A and B appeared and a reversed-phase waveform was obtained in the transmitted waveform. Peak A decreased as the modulation frequency increased, and peak B was only observed for modulation frequencies above 50 MHz. In the case of a modulation degree under 35%, the transmitted waveform changed to the opposite phase of incident one for modulation frequencies up to 100 MHz. In addition, the negative nonlinear absorption effect was dependent on the product of the composition of erbium and the sample length. It was suggested that the enhanced absorption was due to stimulated emission in three excited states of Er3+.

Japanese Journal of Applied Physics•Aug 1, 1997•6 citations
An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.
An all-optical inverter derived from the negative nonlinear absorption effect was demonstrated in erbium–yttrium aluminum garnet crystals using 1.53 μm laser diode. The effect was obtained at wavelengths of 1532 to 1534 nm in absorption spectra corresponding to the transition from the I15/24 to the I13/24 levels in Er3+ for sample lengths greater than 1.0 mm. The reversed-phase transmitted wave forms were observed at modulation frequencies from 1 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a four-level system of the Er3+ ion.
Dependence of the negative nonlinear absorption effect (NNA effect) on modulation frequency was investigated in an erbium-doped lutetium aluminum garnet (Er:LuAG) crystal at the wavelength of 787.8 nm. When the intensity of the incident laser irradiated on Er:LuAG and Er:YAG crystals was wavy, those crystals were observed NNA effect that the transmitted laser intensity shows opposite phase of the incident laser at the wavelength of about 788 nm. The transmitted waveforms changed to the opposite phase of the incident waveform for modulation frequencies up to 1 GHz. For 1 GHz, the peak of the reversed-phase waveform was shifted by approximately 250 ps.
Modulation characteristics of a negative nonlinear absorption effect were investigated in 3 wt % erbium-doped lithium niobate using a 1530 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 85% for a sample length of 14 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 1 kHz to 10 GHz. The negative nonlinear absorption effect for 1.5 μm can be explained by considering an enhanced absorption model for a four-level system of the Er3+ ion.
An all-optical inverter, which operates over a range of 15–1400 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.3, 787.9 and 790 nm laser diodes. In the case of 787.3 nm, the reversed-phase wave forms were obtained in a temperature range of 15–1100 K. In the case of 787.9 and 790 nm, they were observed up to 1400 K. It has been confirmed that the negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a five-level system of the Er3+ ion. The effect has a characteristic, which is almost independent of the ambient temperature because it is formed by optical transitions of the inner shell of the erbium atom.
Dependence of the negative nonlinear absorption effect on both modulation degree and frequency was investigated in erbium yttrium aluminum garnet crystals. For a modulation frequency of 1 MHz, two peaks, A and B, were observed in the transmitted waveform. With a decreasing modulation degree, peak C which consists of peaks A and B appeared and a reversed-phase waveform was obtained in the transmitted waveform. Peak A decreased as the modulation frequency increased, and peak B was only observed for modulation frequencies above 50 MHz. In the case of a modulation degree under 35%, the transmitted waveform changed to the opposite phase of incident one for modulation frequencies up to 100 MHz. In addition, the negative nonlinear absorption effect was dependent on the product of the composition of erbium and the sample length. It was suggested that the enhanced absorption was due to stimulated emission in three excited states of Er3+.