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Applied Physics Letters

All-optical inverter operating over a temperature range of 15–1400 K in erbium-doped lutetium aluminum garnet

Yoshinobu Maeda

Published Jan 26, 1998• 18 citations
Publisher

Abstract

An all-optical inverter, which operates over a range of 15–1400 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.3, 787.9 and 790 nm laser diodes. In the case of 787.3 nm, the reversed-phase wave forms were obtained in a temperature range of 15–1100 K. In the case of 787.9 and 790 nm, they were observed up to 1400 K. It has been confirmed that the negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a five-level system of the Er3+ ion. The effect has a characteristic, which is almost independent of the ambient temperature because it is formed by optical transitions of the inner shell of the erbium atom.

DOI
10.1063/1.120768

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The temperature dependence of the negative nonlinear absorption (NNA) effect was investigated in an erbium-doped yttrium aluminum garnet (YAG) crystal using a 787.3 nm laser diode. The NNA effect was obtained in a temperature range of 15 to 400 K. An absorption peak corresponding to both the 4 I 15/2-4 I 9/2 and 4 I 13/2-2 H 11/2 transitions of Er3+ in the YAG at 400 K was displaced from that at 300 K. It is considered that the NNA effect weakened at high temperature because the absorption cross section decreased due to the shift of the absorption peak. In addition, the dependence of the NNA effect on the modulation degree was investigated. The characteristic of the increase in the incident laser intensity was almost the same as that for the decrease. It was confirmed that the mechanism of the NNA effect can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the NNA effect weakened at the low temperature because the number of phonons decreased due to the low temperature.

Japanese Journal of Applied Physics•Jun 1, 1998•0 citations
An all-optical inverter, which operates over a range of 15–1400 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.3, 787.9 and 790 nm laser diodes. In the case of 787.3 nm, the reversed-phase wave forms were obtained in a temperature range of 15–1100 K. In the case of 787.9 and 790 nm, they were observed up to 1400 K. It has been confirmed that the negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a five-level system of the Er3+ ion. The effect has a characteristic, which is almost independent of the ambient temperature because it is formed by optical transitions of the inner shell of the erbium atom.
An all-optical inverter, which operates over a range of 15-1600 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.8, 787.8 and 790.1 nm laser diodes. In the case of 787.3 nm, the reversed-phase waveforms were obtained in a temperature range of 15-1100 K. In the case of 790.1 nm, they were observed in a temperature range of 850-1600 K. It has been confirmed that a mechanism of the phenomenon can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er/sup 3+/ ion.
An all-optical inverter derived from the negative nonlinear absorption effect was demonstrated in erbium–yttrium aluminum garnet crystals using 1.53 μm laser diode. The effect was obtained at wavelengths of 1532 to 1534 nm in absorption spectra corresponding to the transition from the I15/24 to the I13/24 levels in Er3+ for sample lengths greater than 1.0 mm. The reversed-phase transmitted wave forms were observed at modulation frequencies from 1 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a four-level system of the Er3+ ion.
An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.
Temperature dependence of an enhanced excited state absorption was investigated in erbium-doped garnet crystals using 787.3 and 787.8 nm laser diodes. The enhanced absorption was obtained at temperature ranges of 15–570 K, 15–420 K, and 15–1200 K in a yttrium aluminum garnet, a yttrium scandium gallium garnet, and a lutetium aluminum garnet, respectively. Absorption peaks corresponding to both the I1615/2−I49/2 and the I1613/2−I211/2 transitions of Er3+ in garnets were shifted from those for 300 K at high temperature. The enhanced absorption weakened at high temperature because an absorption cross section from the I413/2 level to the H211/2 level decreased due to the shift of the absorption peaks. It has been confirmed that a mechanism of the enhanced absorption can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the enhanced absorption weakened at temperatures lower than 12 K because the number of phonons decreased due to low temperature.
The temperature dependence of the negative nonlinear absorption (NNA) effect was investigated in an erbium-doped yttrium aluminum garnet (YAG) crystal using a 787.3 nm laser diode. The NNA effect was obtained in a temperature range of 15 to 400 K. An absorption peak corresponding to both the 4 I 15/2-4 I 9/2 and 4 I 13/2-2 H 11/2 transitions of Er3+ in the YAG at 400 K was displaced from that at 300 K. It is considered that the NNA effect weakened at high temperature because the absorption cross section decreased due to the shift of the absorption peak. In addition, the dependence of the NNA effect on the modulation degree was investigated. The characteristic of the increase in the incident laser intensity was almost the same as that for the decrease. It was confirmed that the mechanism of the NNA effect can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the NNA effect weakened at the low temperature because the number of phonons decreased due to the low temperature.