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International High Temperature Electronics Conference (HITEC)

All-optical inverter operating over a temperature range of 15-1600 K

Yoshinobu Maeda

Published Nov 27, 2002• 0 citations
Publisher

Abstract

An all-optical inverter, which operates over a range of 15-1600 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.8, 787.8 and 790.1 nm laser diodes. In the case of 787.3 nm, the reversed-phase waveforms were obtained in a temperature range of 15-1100 K. In the case of 790.1 nm, they were observed in a temperature range of 850-1600 K. It has been confirmed that a mechanism of the phenomenon can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er/sup 3+/ ion.

DOI
10.1109/hitec.1998.676779

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Sep 20, 1999•0 citations
An all-optical inverter, which operates over a range of 15-1600 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.8, 787.8 and 790.1 nm laser diodes. In the case of 787.3 nm, the reversed-phase waveforms were obtained in a temperature range of 15-1100 K. In the case of 790.1 nm, they were observed in a temperature range of 850-1600 K. It has been confirmed that a mechanism of the phenomenon can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er/sup 3+/ ion.
An all-optical inverter, which operates over a range of 15–1400 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.3, 787.9 and 790 nm laser diodes. In the case of 787.3 nm, the reversed-phase wave forms were obtained in a temperature range of 15–1100 K. In the case of 787.9 and 790 nm, they were observed up to 1400 K. It has been confirmed that the negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a five-level system of the Er3+ ion. The effect has a characteristic, which is almost independent of the ambient temperature because it is formed by optical transitions of the inner shell of the erbium atom.
Temperature dependence of an enhanced excited state absorption was investigated in erbium-doped garnet crystals using 787.3 and 787.8 nm laser diodes. The enhanced absorption was obtained at temperature ranges of 15–570 K, 15–420 K, and 15–1200 K in a yttrium aluminum garnet, a yttrium scandium gallium garnet, and a lutetium aluminum garnet, respectively. Absorption peaks corresponding to both the I1615/2−I49/2 and the I1613/2−I211/2 transitions of Er3+ in garnets were shifted from those for 300 K at high temperature. The enhanced absorption weakened at high temperature because an absorption cross section from the I413/2 level to the H211/2 level decreased due to the shift of the absorption peaks. It has been confirmed that a mechanism of the enhanced absorption can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the enhanced absorption weakened at temperatures lower than 12 K because the number of phonons decreased due to low temperature.
An all-optical inverter derived from the negative nonlinear absorption effect was demonstrated in erbium–yttrium aluminum garnet crystals using 1.53 μm laser diode. The effect was obtained at wavelengths of 1532 to 1534 nm in absorption spectra corresponding to the transition from the I15/24 to the I13/24 levels in Er3+ for sample lengths greater than 1.0 mm. The reversed-phase transmitted wave forms were observed at modulation frequencies from 1 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a four-level system of the Er3+ ion.
An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.
Dependence of the negative nonlinear absorption effect (NNA effect) on modulation frequency was investigated in an erbium-doped lutetium aluminum garnet (Er:LuAG) crystal at the wavelength of 787.8 nm. When the intensity of the incident laser irradiated on Er:LuAG and Er:YAG crystals was wavy, those crystals were observed NNA effect that the transmitted laser intensity shows opposite phase of the incident laser at the wavelength of about 788 nm. The transmitted waveforms changed to the opposite phase of the incident waveform for modulation frequencies up to 1 GHz. For 1 GHz, the peak of the reversed-phase waveform was shifted by approximately 250 ps.