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Journal of Applied Physics

Temperature dependence of the enhanced excited state absorption in erbium-doped garnets

Yoshinobu Maeda, Toshikazu Yamada

Published Jun 15, 1998• 15 citations
Publisher

Abstract

Temperature dependence of an enhanced excited state absorption was investigated in erbium-doped garnet crystals using 787.3 and 787.8 nm laser diodes. The enhanced absorption was obtained at temperature ranges of 15–570 K, 15–420 K, and 15–1200 K in a yttrium aluminum garnet, a yttrium scandium gallium garnet, and a lutetium aluminum garnet, respectively. Absorption peaks corresponding to both the I1615/2−I49/2 and the I1613/2−I211/2 transitions of Er3+ in garnets were shifted from those for 300 K at high temperature. The enhanced absorption weakened at high temperature because an absorption cross section from the I413/2 level to the H211/2 level decreased due to the shift of the absorption peaks. It has been confirmed that a mechanism of the enhanced absorption can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the enhanced absorption weakened at temperatures lower than 12 K because the number of phonons decreased due to low temperature.

DOI
10.1063/1.367987

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Journal of Applied Physics•Oct 15, 1992•42 citations
Temperature dependence of an enhanced excited state absorption was investigated in erbium-doped garnet crystals using 787.3 and 787.8 nm laser diodes. The enhanced absorption was obtained at temperature ranges of 15–570 K, 15–420 K, and 15–1200 K in a yttrium aluminum garnet, a yttrium scandium gallium garnet, and a lutetium aluminum garnet, respectively. Absorption peaks corresponding to both the I1615/2−I49/2 and the I1613/2−I211/2 transitions of Er3+ in garnets were shifted from those for 300 K at high temperature. The enhanced absorption weakened at high temperature because an absorption cross section from the I413/2 level to the H211/2 level decreased due to the shift of the absorption peaks. It has been confirmed that a mechanism of the enhanced absorption can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the enhanced absorption weakened at temperatures lower than 12 K because the number of phonons decreased due to low temperature.
The temperature dependence of the negative nonlinear absorption (NNA) effect was investigated in an erbium-doped yttrium aluminum garnet (YAG) crystal using a 787.3 nm laser diode. The NNA effect was obtained in a temperature range of 15 to 400 K. An absorption peak corresponding to both the 4 I 15/2-4 I 9/2 and 4 I 13/2-2 H 11/2 transitions of Er3+ in the YAG at 400 K was displaced from that at 300 K. It is considered that the NNA effect weakened at high temperature because the absorption cross section decreased due to the shift of the absorption peak. In addition, the dependence of the NNA effect on the modulation degree was investigated. The characteristic of the increase in the incident laser intensity was almost the same as that for the decrease. It was confirmed that the mechanism of the NNA effect can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the NNA effect weakened at the low temperature because the number of phonons decreased due to the low temperature.
Using a laser diode modulated at 250 and 500 MHz, dependence of enhanced absorption on both sample length and temperature was investigated in an erbium doped yttrium aluminum garnet crystal. The transmitted laser intensity decreased with a decay time of 300 ps for sample lengths greater than 3.0 mm and temperatures higher than 50 K when the incident laser intensity increased. In addition, an emission peak was observed near 835 nm corresponding to the transition from the S3/24 level to the I13/24 in Er3+. It was suggested that the enhanced absorption was caused by stimulated emission in three excited states.
Dependence of the negative nonlinear absorption effect on both modulation frequency and sample temperature was investigated in an erbium yttrium aluminum garnet crystal. The phase of transmitted laser was opposite to that of the incident laser at modulation frequencies lower than 1 MHz. However, the transmitted laser waveform was asymmetrical above 5 MHz and the time-dependence characteristics agreed with the lifetime of the 4S3/2 level in Er3+. At temperatures lower than 25 K, enhanced absorption was weakened because the number of phonons decreased due to low temperature. It is suggested that the negative nonlinear absorption effect occurred due to enhanced absorption in three excited states. © 1998 Scripta Technica. Electron Comm Jpn Pt 2, 80(6): 43–48, 1997
An all-optical inverter, which operates over a range of 15–1400 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.3, 787.9 and 790 nm laser diodes. In the case of 787.3 nm, the reversed-phase wave forms were obtained in a temperature range of 15–1100 K. In the case of 787.9 and 790 nm, they were observed up to 1400 K. It has been confirmed that the negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a five-level system of the Er3+ ion. The effect has a characteristic, which is almost independent of the ambient temperature because it is formed by optical transitions of the inner shell of the erbium atom.
The dependence of the negative nonlinear absorption effect on the modulation degree and frequency, the sample temperature, and the erbium concentration was investigated in erbium yttrium aluminum garnet crystals. With a decreasing modulation degree, a reverse-phased wave form was obtained in the transmitted wave form at modulation frequency lower than 1 MHz. However, the transmitted laser wave form was asymmetrical at higher than 5 MHz and the time-dependent characteristics agreed with the lifetime of the S3/24 level in Er3+. At temperatures lower than 77 K, the negative nonlinear absorption effect weakened because the number of phonons decreased due to low temperature. It is considered that the Er3+ concentration dependence for modulation frequency depends on the lifetime of the S3/24 level. It has been confirmed that a mechanism of negative nonlinear absorption can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. Experimental results agreed well with the calculated values. It is suggested that the effect was due to stimulated emission from the S3/24 level to the I3/24 level.
Negative nonlinear absorption, which causes the transmission to decrease as the laser intensity increases, was observed in a 16 at. % Er:YAG crystal using a laser diode operating at 787 and 784 nm. This effect for 787 nm was strong because 787 nm was the center of an absorption peak that is related to the excited-state absorption from 4I13/2 to 2H11/2. It is suggested that these phenomena take place because the absorption cross section from 4I13/2 to 2H11/2 is larger than that from 4I15/2 to 4I9/2 using a double-absorption model.