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Modern Physics Letters B

ANALYSIS OF ATOM FOCUSING IN A STANDING WAVE LASER FIELD FOR NANOMETER-SCALE FABRICATION

Xianzhong Chen, Jianping Shi, Xiangang Luo, Chun-Mei Zhang, Xunan Chen, Tingwen Xing, Chunlei Du, Hanmin Yao

Published Feb 10, 2006• 0 citations
Publisher

Abstract

We present a calculation model to investigate the focusing characteristics of an atomic beam in a laser standing wave, taking the wave nature of the atomic propagation into account. The effects of atom source, optical parameters of the laser field and the substrate position on atom focusing are analyzed. Numerical simulations indicate that the best focusing performance can be obtained by repositioning the substrate or optimizing the longitudinal atomic beam speed, laser intensity and the detuning of the laser beam. The feature width of the nanostructure is mainly determined by the transverse speed distribution of atoms. Some methods for optimizing experimental parameters are suggested.

DOI
10.1142/s0217984906009219

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We present a calculation model to investigate the focusing characteristics of an atomic beam in a laser standing wave, taking the wave nature of the atomic propagation into account. The effects of atom source, optical parameters of the laser field and the substrate position on atom focusing are analyzed. Numerical simulations indicate that the best focusing performance can be obtained by repositioning the substrate or optimizing the longitudinal atomic beam speed, laser intensity and the detuning of the laser beam. The feature width of the nanostructure is mainly determined by the transverse speed distribution of atoms. Some methods for optimizing experimental parameters are suggested.
The light pressure force from an optical standing wave (SW) can focus an atomic beam to submicrometer dimensions. To make the best of this technique it is necessary to find a set of optimal experimental parameters. In this paper we consider theoretically the chromium atoms focusing and demonstrate that the focusing performance depends not only on the strength of but also on the time atoms take to traverse the force field. The general conclusions drawn can easily be applied to other atoms. To analyze the problem we numerically integrate a coupled time-dependent Schro¨dingerSchr{\"{o}}dingerSchro¨dinger equation over a wide range of experimental parameters. It is found that an optimal atomic beam speed-laser intensity pair does exist, which could give substantially improved focusing over the one with the experimental parameters given in the literature. It is also shown that the widely used classical particle optics approach can lead to erroneous predictions.
The two-level atom focusing in a Gaussian standing wave laser field was analyzed from the perspective of both classical mechanics and wave mechanics. The effects of source imperfection such as velocity spread and beam spread on atom focusing were analyzed by numerically integrating the classical equation of atomic motion. The ideal focal plane can be easily determined by the variation of atomic density at the minimal potential of the standing wave laser field as a function of traveling distance. In the absence of source imperfection, the contribution of diffractive aberration originating from the wave nature of the atom to broadening of feature width is larger than that of spherical aberration. Several methods for improving atom lithography experiments were presented.
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Atom lens generated by a laser standing wave can be used to focus an atomic beam to nanometer dimensions. Aberrations exist in atom lens owing to the influence of velocity spread, beam spread, wave nature of atoms and so on. Two theoretical models were built to describe atom lens. Spherical aberration, chromatic aberration and the aberration caused by angular spread were analyzed with semi-classical model, and diffractive aberration was analyzed using quantum model. Simulation results show that aberration originates mainly from beam spread, and diffractive aberration is larger than spherical aberration and chromatic aberration. Three solutions of optimization of experimental parameters, adding beam mask and using etching technologies for improving atom lithography quality are presented.