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IEEE Transactions on Magnetics

Josephson quantum interference computer devices

H. H. Zappe

Published Jan 1, 1977• 106 citations
Publisher

Abstract

Josephson devices are potential elements for ultra-fast computers. Rather complex logic and memory circuits have been realized. Here quantum interference devices with improved speed and power performance are discussed. Latching and non-latching logic operation is possible and experiments with non-latching circuits are reviewed. Memory applications of quantum interference devices are also considered.

DOI
10.1109/tmag.1977.1059358

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Josephson devices are potential elements for ultra-fast computers. Rather complex logic and memory circuits have been realized. Here quantum interference devices with improved speed and power performance are discussed. Latching and non-latching logic operation is possible and experiments with non-latching circuits are reviewed. Memory applications of quantum interference devices are also considered.
Experimental superconducting Josephson devices being investigated for use in digital logic and memory circuits have been demonstrated to switch in the 10 to 100 picosecond (1 picosecond = 10-12 sec) range. Projections based on the operation of individual logic circuits indicate that they may surpass semiconductor circuits in very high performance CPU's. This potential is based on the fact that these circuits dissipate extremely little energy, on the order of 10 to 1000 attojoules (attojoule = 10-18 joule), while operating with subnanosecond delays. It should, therefore, be possible to package Josephson devices very densely and interconnect them by properly terminated superconducting transmission lines so that the fast switching speed of individual circuits is retained throughout large logic networks.
Experimental superconducting Josephson devices being investigated for use in digital logic and memory circuits have been demonstrated to switch in the 10 to 100 picosecond (1 picosecond = 10-12 sec) range. Projections based on the operation of individual logic circuits indicate that they may surpass semiconductor circuits in very high performance CPU's. This potential is based on the fact that these circuits dissipate extremely little energy, on the order of 10 to 1000 attojoules (attojoule = 10-18 joule), while operating with subnanosecond delays. It should, therefore, be possible to package Josephson devices very densely and interconnect them by properly terminated superconducting transmission lines so that the fast switching speed of individual circuits is retained throughout large logic networks.
The potential of a new technology, based on the superconducting Josephson tunneling effect, has been assessed for use in high-speed computer systems. Josephson tunneling circuits for memory and logic functions can be switched at sub-nanosecond delay, do not require standby power, and dissipate extremely low energy, typically less than 10-13joule during fast switching operation. High-speed circuits with high packing densities, not limited by power dissipation problems, can therefore be expected. Low thermal noise at cryogenic temperatures ensures reliable operation despite the low energy switching signal. Practically lossless signal transmission via superconducting lines can be exploited for high-speed operation even when sizeable memory and logic modules are assembled. Two random access memory modules have been designed on the basis of single device experiments. Operational characteristics leading to the conclusion that 30 Mbit capacity, less than 1 watt refrigeration requirement (at 3.6° K) and cycle times of 40 ns (in one case) and 15 ns (in the second case), can be achieved are presented.
Results of an experiment on Josephson-CMOS memories show that these circuits have the potential to remove the memory bottleneck faced by superconductive electronics and the speed limitations of purely CMOS memories. The experiment demonstrates monolithic integrated Nb-AlO/sub x/-Nb Josephson-CMOS digital circuits operating at 4 K, the feasibility of Josephson-CMOS interface circuits with conversion delays of less than 150 ps, and fluxoelectronic current sensing of MOS RAM and CAM (content-addressable memory) cells using 4JL gates and SQUIDs (superconducting quantum interference devices).>