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Physical Review Letters

Quantum Interference Enhancement with Left-Handed Materials

Yaping Yang, Jingping Xu, Hong Chen, Shi-Yao Zhu

Published Jan 28, 2008• 106 citations
Publisher

Abstract

The quantum interference between two spontaneous emission transitions, which are orthogonal, in a three-level system, can be greatly enhanced by using left-handed materials due to the focusing and phase compensation effects. The influence of the dispersion and dissipation of the materials on the quantum interference enhancement is investigated, and the enhancement of quantum interference is still significant. The quantum interference enhancement will result in a large quenching of the spontaneous emission, even if the distance between the materials and systems is larger than 10 wavelengths.

DOI
10.1103/physrevlett.100.043601

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The quantum interference between two spontaneous emission transitions, which are orthogonal, in a three-level system, can be greatly enhanced by using left-handed materials due to the focusing and phase compensation effects. The influence of the dispersion and dissipation of the materials on the quantum interference enhancement is investigated, and the enhancement of quantum interference is still significant. The quantum interference enhancement will result in a large quenching of the spontaneous emission, even if the distance between the materials and systems is larger than 10 wavelengths.
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We address quantum interference of the Zeeman atom embedded in two kinds of structures containing left-handed materials (LHM), which are a single LHM layer mounted on a single mirror (SLSM) and Fabry-P\'erot cavity filled with a LHM layer by half (FPCLH). Especially, the influence of the dissipation of LHM on quantum interference has been studied in detail. Though dissipation weakens quantum interference in general, it holds nearly complete quantum interference when the thickness of the cavity is small for FPCLH. Moreover, with equivalence of left- and right- rotation polarized dipoles to two spatial orthogonal dipoles, we found the optimum orientation of two orthogonal dipoles which can realize the maximum quantum interference in a certain anisotropic environment. Our research may have potential applications in the designing of microsize devices.
Spontaneous emission in atomic system arises due to the interaction of atoms with environmental modes. Atomic coherence and quantum interference are the most important mechanisms for controlling the spontaneous emission. We show that under certain conditions complete quenching of spontaneous emission is possible. By using V type three level system driven by two fields, the phase dependence of quantum interference is investigated. The Fano type and P type interference mechanism in atomic coherence system driven by microwaves are investigated. In particular we find that both phase dependence interference mechanism may be destructive simultaneously and thus lead to spontaneous emission cancellation in different parts of the spectrum. One of the most important applications of this system is the refractive index enhancement.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
In this work, we show that the quantum interference between two spontaneous emission channels can be greatly enhanced when a three-level V-type quantum emitter is placed near the bismuth chalcogenide ( B i 2 T e 3 ). Namely, we calculated the degree of quantum interference for quantum emitters placed in the vicinity of a planar surface of a B i 2 T e 3 slab, as well as near a B i 2 T e 3 microsphere. We found, in particular, that the degree of quantum interference assumes very high values, for both geometries, which is a result of the strong dependence of the spontaneous emission rate on the orientation of a quantum-emitter dipole relative to the B i 2 T e 3 surface, at the frequencies of polaritonic-type excitations. These particular high values of quantum interference can trigger a variety of phenomena associated with quantum interference of spontaneous-emission channels, such as lasing without inversion, coherent populations trapping, transparency, nonlinearities, and so forth.
We propose a new scheme for achieving giant enhancement of the self-Kerr nonlinearity in a four-level Y-type atom with two highest nearly degenerate lying levels. We have found that, owing to the quantum interference effect that originates from spontaneous emission from two closely lying levels, large Kerr nonlinearity can be achieved under appropriate conditions. In particular, in addition to the amplitudes, the phases of the applied fields also affect the Kerr nonlinearity. We attribute the enhancement of Kerr nonlinearity mainly to the presence of some extra atomic coherence terms induced by the spontaneously generated coherence. We present a physical understanding of our numerical results using analytical explanation.