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IEEE Electron Device Letters

An inductively coupled single-flux quantum NDRO memory cell

Kyoko Kojima, T. Noguchi, Koichi Hamanaka

Published Aug 1, 1983• 3 citations
Publisher

Abstract

An inductively coupled single-flux quantum nondestructive readout (NDRO) memory cell was fabricated. Control lines of this memory cell are coupled to the main inductance loop. The margin for the damping resistor becomes larger than for a multiflux quantum memory cell. The memory cell containing all return lines occupies only 247 minimum-linewidth squares, on the basis of a 5-µm rule Pb-alloy technique.

DOI
10.1109/edl.1983.25727

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