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Journal of Experimental and Theoretical Physics Letters

Decrease in the damping rate of Rabi oscillations of artificial atoms at nonresonant excitation

A. P. Saǐko, Ryhor Fedaruk, Siarhei A. Markevich

Published Oct 1, 2013• 6 citations
Publisher

Abstract

A decrease in the damping rate of Rabi oscillations with an increase in the detuning of the frequency of exciting radiation from the resonance frequency of a two-level quantum system has been explained. This effect is implemented when the rate of the pure dephasing of the quantum system is lower than the longitudinal relaxation rate. It can be observed, e.g., for artificial atoms such as semiconductor quantum dots for which pure dephasing processes are almost absent.

DOI
10.1134/s0021364013170128

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We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.
We extend the exciton population equations of a two-level quantum dot system with weak excitation to the ones with strong excitations, in which, the phonon-induced intensity-dependent dephasing time and decay rate are involved. The straightforward calculated populations from the modified population equations demonstrate the damping behavior of Rabi oscillation as the external field increasing. The effect of the intensity-dependent dephasing time and the intensity-dependent decay rate are also discussed.
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The eect of acoustic phonons on dierent light-induced excitations of a semiconductor quantum dot is investigated.Resonant excitation of the quantum dot leads to the Rabi oscillations, which are damped due to the phonon interaction.When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes.For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons.For all three scenarios the inuence of the phonons depends non-monotonically on the pulse area.
Rabi oscillations in the presence of dissipation are theoretically studied at finite temperatures. The system that we consider is a quantum two-level system with both internal relaxations and external decays under an alternating field. The environment modeled by a set consisting of an infinite number of harmonic oscillators is employed in order to introduce temperature into the system. The equations of motion for the density matrix (Liouville equation) of such a quantum two-level system coupled to a Caldeira-Leggett-type environment are obtained with the Born-Markov approximation. Internal relaxations of the system are incorporated into the Liouville equations using the Redfield theory, resulting in Liouville equations with temperature-dependent relaxation rates. The exact solutions are obtained by using the Torrey method based on the Laplace transform. The solution for damped Rabi oscillations can be divided into elementary relaxation processes such as a simple decay and a damped oscillation. Since the coefficients of the solution involve physical relaxation rates corresponding to the processes, all the relaxation rates such as the dephasing rate are determined by simple calculations of the coefficients in these different relaxation processes.