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Journal of Physics Condensed Matter

Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

Dmitri S. Mogilevtsev, A.P. Nisovtsev, S. Ya. Kilin, Solange Bessa Cavalcanti, Humberto Siqueira Brandi, L. E. Oliveira

Published Jan 12, 2009• 10 citations
Publisher

Abstract

A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.

DOI
10.1088/0953-8984/21/5/055801

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A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.
We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.
A theoretical investigation on slow light propagation based on electromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstrated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.
Electron-phonon interaction is a major source of optical dephasing in semiconductor quantum dots. Within a density matrix theory the electron-phonon interaction is considered up to the second order of a correlation expansion, allowing the calculation of the quantum kinetic dephasing dynamics of optically induced nonlinearities in GaAs quantum dots for arbitrary pulse strengths and shapes. We find Rabi oscillations renormalized and a damping that depends on the input pulse strength, a behavior not known from exponential dephasing mechanisms.
A theoretical investigation on slow light propagation based on eletromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstraonated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.
We extend the exciton population equations of a two-level quantum dot system with weak excitation to the ones with strong excitations, in which, the phonon-induced intensity-dependent dephasing time and decay rate are involved. The straightforward calculated populations from the modified population equations demonstrate the damping behavior of Rabi oscillation as the external field increasing. The effect of the intensity-dependent dephasing time and the intensity-dependent decay rate are also discussed.