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arXiv:1601.01540

Slow light in semiconductor quantum dots: effects of non-Markovianity and correlation of dephasing reservoirs

Dmitri S. Mogilevtsev, E. Reyes‐Gómez, Solange Bessa Cavalcanti, L. E. Oliveira

Published Jan 7, 2016• 0 citations
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Abstract

A theoretical investigation on slow light propagation based on eletromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstraonated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.

DOI
10.48550/arxiv.1601.01540

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A theoretical investigation on slow light propagation based on eletromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstraonated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.
A theoretical investigation on slow light propagation based on electromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstrated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.
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A variable semiconductor optical buffer based on the electromagnetically induced transparency in a quantum dot waveguide is theoretically investigated with feasible parameters for applications to a 40 Gbps optical network. We show the refractive index and absorption spectra of the quantum dot waveguide at various pump levels, which exhibit an optimal pump power for maximum slow-down factor, in agreement with the previous experimental observation using a Pr-doped solid. The group velocity slow-down factor is theoretically analysed as a function of the pump intensity at different broadened linewidths. Inhomogeneous broadening in self-assembled quantum dots degrades the slow-down factor. In order to reduce the inhomogeneous broadening effects, we propose to use a resonant microcavity structure with quantum dots embedded in the active layer to enhance the slow-down factor.