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physica status solidi (b)

Phonon‐induced damping of Rabi oscillations in semiconductor quantum dots

Jens Förstner, Carsten Weber, J. Danckwerts, Andreas Knorr

Published Jul 21, 2003• 48 citations
Publisher

Abstract

Abstract The phonon‐induced dephasing dynamics of semiconductor quantum dots during nonlinear optical excitation is studied using quantum kinetic equations. We find that despite the decoherence process Rabi oscillations occur even for relatively long pulse durations and that their signatures in pump‐probe experiments only get suppressed for high input pulse areas.

DOI
10.1002/pssb.200303155

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Abstract The phonon‐induced dephasing dynamics of semiconductor quantum dots during nonlinear optical excitation is studied using quantum kinetic equations. We find that despite the decoherence process Rabi oscillations occur even for relatively long pulse durations and that their signatures in pump‐probe experiments only get suppressed for high input pulse areas.
Electron-phonon interaction is a major source of optical dephasing in semiconductor quantum dots. Within a density matrix theory the electron-phonon interaction is considered up to the second order of a correlation expansion, allowing the calculation of the quantum kinetic dephasing dynamics of optically induced nonlinearities in GaAs quantum dots for arbitrary pulse strengths and shapes. We find Rabi oscillations renormalized and a damping that depends on the input pulse strength, a behavior not known from exponential dephasing mechanisms.
The eect of acoustic phonons on dierent light-induced excitations of a semiconductor quantum dot is investigated.Resonant excitation of the quantum dot leads to the Rabi oscillations, which are damped due to the phonon interaction.When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes.For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons.For all three scenarios the inuence of the phonons depends non-monotonically on the pulse area.
Abstract Semiconductor quantum dots are solid state few‐level systems which can interact strongly with light. As such, they can be used as a single photon source or to perform solid‐state quantum‐optics experiments. A major difference to atoms is the interaction with the lattice vibrations, that is, the phonons, which strongly affect the optical signals from a quantum dot. In this paper, we calculate the time‐resolved pump‐probe signals from a continuously driven quantum dot accounting for detuned excitation and electron–phonon interaction. We provide analytical equations giving insight into the different phenomena observed in the spectra like an oscillation between absorptive and dispersive line shapes. For detuned excitation, the electron–phonon interaction can lead to phonon‐assisted occupation of the exciton, giving rise to a strong asymmetry in the dynamical behavior depending on the sign of the detuning. The time‐resolved spectra monitor this relaxation path, which helps understanding the effect of electron–phonon interaction in quantum dots.
This chapter is devoted to the recent theoretical results on the optical quantum control over charges confined in quantum dots under influence of phonons. We show that lattice relaxation processes lead to decoherence of the confined carrier states. The theoretical approach leading to a uniform, compact description of the phonon impact on carrier dynamics, perturbative in phonon couplings but applicable to arbitrary unperturbed evolution, is described in detail. Next, some applications are presented: phonon damping of Rabi oscillations in quantum dots and phonon-induced error of a single-qubit gate for an excitonic quantum dot qubit as well as for a semiconductor quantum dot spin qubit operated via a STIRAP transfer.