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arXiv:cond-mat/0408570 · Physical Review Letters

Decoherence of Rabi Oscillations in a Single Quantum Dot

J. M. Villas-Bôas, Sergio E. Ulloa, Alexander O. Govorov

Published Feb 8, 2005• 111 citations
arXivHTMLPDF

Abstract

We develop a realistic model of Rabi oscillations in a quantum-dot photodiode. Based in a multiexciton density matrix formulation we show that for short pulses the two-level model fails and higher levels should be taken into account. This affects some of the experimental conclusions, such as the inferred efficiency of the state rotation (population inversion) and the deduced value of the dipole interaction. We also show that the damping observed cannot be explained using constant rates with fixed pulse duration. We demonstrate that the damping observed is in fact induced by an off-resonant excitation to or from the continuum of wetting layer states. Our model describes the nonlinear decoherence behavior observed in recent experiments.

DOI
10.1103/physrevlett.94.057404

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Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
The decoherence of Rabi oscillation (RO) caused by biexciton, population leakage to the wetting layer (WL), and Auger capture in semiconductor quantum dots is theoretically analyzed with multilevel optical Bloch equations. The corresponding effects on the quality factor of RO are also discussed. We have found that the biexciton effect is relatively trifling, as the pulse duration is longer than 5 ps. The population leakage to the WL leads to a decrease of the RO average even though the damping rate is similar to that observed in the experiment. Auger capture in quantum dots results in RO damping that is consistent with the experimental data, which implies that Auger capture is an important decoherence process in quantum dots.
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The Rabi oscillations of the exciton of the excited state in single semiconductor quantum dots were investigated by using the photoluminesence and nano-spectroscopy technique. The population on the excited state oscillated as a function of phase angle of the qubit were recorded, in which pulse-pairs with the adjustable time delay were used as the excitation. The quality factors of free rotation is about 9.8×104, and that of the dynamic rotation is about 18 for the single quantum dot excitonic qubit based on the experimental observations, The decoherece mechanism of Rabi oscillation stem from the capture processes from wetting layer to quantum dot is also analyzed. The exciton coherent control and the statistic characteristics of single photon emission in single semiconductor quantum dot are discussed as well.