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Semiconductor Science and Technology

Polarization-dependent Rabi oscillations in single InGaAs quantum dots

Lucien Besombes, Jeremy J. Baumberg, Junichi Motohisa

Published Mar 3, 2004• 7 citations
Publisher

Abstract

Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.

DOI
10.1088/0268-1242/19/4/052

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Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.
We present measurements of the dephasing time and of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature, using an heterodyne pump–probe technique. Dephasing times of several hundred picoseconds are measured, enabling coherent light–matter interaction with picosecond optical pulses. Optical Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparison with calculations indicates that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.
We have investigated Rabi oscillations of exciton polarization in a self-assembled InAs quantum dot ensemble. The four-wave mixing signals measured as a function of the average of the pulse area showed the large in-plane anisotropy and nonharmonic oscillations. The experimental results can be well reproduced by a two-level model calculation including three types of inhomogeneities without any fitting parameter. The large anisotropy can be well explained by the anisotropic dipole moments. We also find that the nonharmonic behaviors partly originate from the polarization interference.
Transient nonlinear optical spectroscopy, performed on excitons confined to single GaAs quantum dots, shows oscillations that are analogous to Rabi oscillations in two-level atomic systems. This demonstration corresponds to a one-qubit rotation in a single quantum dot which is important for proposals using quantum dot excitons for quantum computing. The dipole moment inferred from the data is consistent with that directly obtained from linear absorption studies. The measurement extends the artificial atom model of quantum dot excitonic transitions into the strong-field limit, and makes possible full coherent optical control of the quantum state of single excitons using optical pi pulses.
Optical Rabi oscillations are coherent population oscillations of a two-level system coupled by an electric dipole transition when driven by a strong nearly resonant optical field. In quantum dot structures, these measurements have typically been performed as a function of the total pulse area $\ensuremath{\int}{\ensuremath{\Omega}}_{0}(t)\phantom{\rule{0.16em}{0ex}}\mathrm{d}t$ where the pulse area varies as a function of Rabi frequency. Here, we report direct detection of the time-resolved coherent transient response of the resonance fluorescence to measure the time evolution of the optical Rabi oscillations in a single charged InAs quantum dot. We extract a decoherence rate consistent with the limit from the excited state lifetime.