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Applied Physics Letters

Observations of Rabi oscillations in a non-polar InGaN quantum dot

Benjamin P. L. Reid, Claudius Kocher, Tongtong Zhu, Fabrice Oehler, Robert M. Emery, Christopher C. S. Chan, Rachel A. Oliver, Robert Anthony Taylor

Published Jun 30, 2014• 16 citations
Publisher

Abstract

Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

DOI
10.1063/1.4886961

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Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
Summary form only given. We use transient nonlinear optical spectroscopy to demonstrate Rabi oscillations between each of the dipole coupled states, corresponding to qubit rotations. The interface fluctuation GaAs quantum dots are probed with sub-micron spatial resolution. The resonant excitation of the biexciton requires a two-color scheme in a hyper Raman gain configuration. To demonstrate exciton Rabi oscillations, the laser wavelength is fixed at the exciton resonance. Exciton and biexciton Rabi oscillations correspond to qubit rotations of the |00> to |01> or |10> state and the |01> or |10> to |11> state respectively, depending on the polarization of the excitation field.
We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.
The Rabi oscillations of the exciton of the excited state in single semiconductor quantum dots were investigated by using the photoluminesence and nano-spectroscopy technique. The population on the excited state oscillated as a function of phase angle of the qubit were recorded, in which pulse-pairs with the adjustable time delay were used as the excitation. The quality factors of free rotation is about 9.8×104, and that of the dynamic rotation is about 18 for the single quantum dot excitonic qubit based on the experimental observations, The decoherece mechanism of Rabi oscillation stem from the capture processes from wetting layer to quantum dot is also analyzed. The exciton coherent control and the statistic characteristics of single photon emission in single semiconductor quantum dot are discussed as well.