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Keji daobao

Quality Factor and Decoherence Mechanism of Rabi Oscillation in Semiconductor Quantum Dot

Si Xiao

Published Jan 1, 2006• 0 citations
OpenAlex

Abstract

The Rabi oscillations of the exciton of the excited state in single semiconductor quantum dots were investigated by using the photoluminesence and nano-spectroscopy technique. The population on the excited state oscillated as a function of phase angle of the qubit were recorded, in which pulse-pairs with the adjustable time delay were used as the excitation. The quality factors of free rotation is about 9.8×104, and that of the dynamic rotation is about 18 for the single quantum dot excitonic qubit based on the experimental observations, The decoherece mechanism of Rabi oscillation stem from the capture processes from wetting layer to quantum dot is also analyzed. The exciton coherent control and the statistic characteristics of single photon emission in single semiconductor quantum dot are discussed as well.

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The Rabi oscillations of the exciton of the excited state in single semiconductor quantum dots were investigated by using the photoluminesence and nano-spectroscopy technique. The population on the excited state oscillated as a function of phase angle of the qubit were recorded, in which pulse-pairs with the adjustable time delay were used as the excitation. The quality factors of free rotation is about 9.8×104, and that of the dynamic rotation is about 18 for the single quantum dot excitonic qubit based on the experimental observations, The decoherece mechanism of Rabi oscillation stem from the capture processes from wetting layer to quantum dot is also analyzed. The exciton coherent control and the statistic characteristics of single photon emission in single semiconductor quantum dot are discussed as well.
The quality factors of quantum bit (qubit) rotations in single self-assembled quantum dots were investigated using photoluminescence spectroscopy. Rotations with azimuthal angle ϕ along the equator of the qubit sphere were implemented by varying the time delay between two π∕2 pulses, resulting in a “free rotation” quality factor Q0=9.8×104. Qubit rotations with polar angle θ as large as 10π along the meridian of the qubit sphere (Rabi oscillations with zero detuning) were realized with a quality factor QR∼18, in experiments probing an excited excitonic state.
The decoherence of Rabi oscillation (RO) caused by biexciton, population leakage to the wetting layer (WL), and Auger capture in semiconductor quantum dots is theoretically analyzed with multilevel optical Bloch equations. The corresponding effects on the quality factor of RO are also discussed. We have found that the biexciton effect is relatively trifling, as the pulse duration is longer than 5 ps. The population leakage to the WL leads to a decrease of the RO average even though the damping rate is similar to that observed in the experiment. Auger capture in quantum dots results in RO damping that is consistent with the experimental data, which implies that Auger capture is an important decoherence process in quantum dots.
The decoherence of Rabi oscillation with multi-level processes in semiconductor quantum dots excited by laser pulses is investigated. By using population dynamic equations of multi-level system, the effect of three kinds of multi-level processes on the damping of Rabi oscillation in quantum dots are numerically simulated and discussed. The effect of biexciton can be neglected when the pulse width is larger than 5ps; the population leakage to wetting layer results in the decreasing of the amplitude and average of the population oscillation on the exciton ground state with the increasing of the excitation intensity; the effect of the two kinds of Auger capture processes on the Rabi oscillation and the spectral width of the photoluminescence from the exciton recombination are also discussed.
The statistic characteristics of single photon emission in single semiconductor quantum dot with pulse excitation have been investigated.With rotating-wave approximation,we deduce the dynamics equations including second-order correlation function from the master equations of the populations and discuss the correlation function of photon emission from the exciton combination under different input pulse areas.There will appear an apparant split peak around zero time delay under strong excitation.For short pulse width,the probability of single photon emission p and the efficiency of single photon emission η oscillate as the excitation intensity increases.It is revealed that high efficient single photon emissions can be realized in this system when excited with input pulse area about π and short pulse width.
We discuss the Rabi splitting and Rabi oscillation of excitons in semiconductor quantum dots and clarify the fundamental physics and new characteristic features. These coherent optical phenomena are not restricted to semiconductor quantum dots and the predicted features would be observed also in atoms and molecules. The universality of the phenomena ensures the possibility for application to quantum state control and quantum information processing by optical means. We discuss briefly the mechanisms of exciton dephasing in semiconductor quantum dots in conjunction with recent observations of the lifetime-limited exciton dephasing time and show that the pure dephasing rate is very small but is not vanishing even at zero Kelvin.