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Acta Physica Sinica

Efficiency of single photon emission in three-level system of semiconductor quantum dots with pulsed excitation

Yaoyi Li, Mu-Tian Cheng, Huijun Zhou, Liu Shao-Ding, Qu‐Quan Wang, Qi-Kun Xue, (1)武汉大学物理系,武汉 430072; (2)武汉大学物理系,武汉 430072;中国科学院物理研究所表面物理国家重点实验室,北京 100080; (3)中国科学院物理研究所表面物理国家重点实验室,北京 100080

Published Jan 1, 2006• 2 citations
Publisher

Abstract

The statistic characteristics of single photon emission in single semiconductor quantum dot with pulse excitation have been investigated.With rotating-wave approximation,we deduce the dynamics equations including second-order correlation function from the master equations of the populations and discuss the correlation function of photon emission from the exciton combination under different input pulse areas.There will appear an apparant split peak around zero time delay under strong excitation.For short pulse width,the probability of single photon emission p and the efficiency of single photon emission η oscillate as the excitation intensity increases.It is revealed that high efficient single photon emissions can be realized in this system when excited with input pulse area about π and short pulse width.

DOI
10.7498/aps.55.1781

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The statistic characteristics of single photon emission in single semiconductor quantum dot with pulse excitation have been investigated.With rotating-wave approximation,we deduce the dynamics equations including second-order correlation function from the master equations of the populations and discuss the correlation function of photon emission from the exciton combination under different input pulse areas.There will appear an apparant split peak around zero time delay under strong excitation.For short pulse width,the probability of single photon emission p and the efficiency of single photon emission η oscillate as the excitation intensity increases.It is revealed that high efficient single photon emissions can be realized in this system when excited with input pulse area about π and short pulse width.
The statistic properties of photon emissions from single semiconductor quantum dots with V-type level driven by pulses are investigated theoretically Based on quantum regression theorem and master equations, the dynamic equations of the second-order correlation function of the photon emissions are deduced. The calculated results reveal that the efficiency of single photon emissions from two orthogonal polarization eigenstates (|x〉 and |y〉) reaches the maximum when the input pulses area is about π, and the probability of the cross-polarized single photon emission from |x〉 and |y〉 decreases with increasing of pulse width.
We analyse the population dynamics and the photon emission statistics of a single semiconductor quantum dot with an exciton–biexciton–triexciton multilevel driven by a pulse field, in which the quantum regression theorem and optical Bloch equations are employed. The populations of the three states are comparable under resonant excitation with the input pulse area around 1.5π. Three second-order cross-correlation functions demonstrate the correlated three-photon emissions at a given order from triexciton, biexciton and exciton states driven by single pulses, while the probability of the bunched three-photon cascaded emissions decreases to the minimum as the input pulse area increases to 2π in every period.
The photon correlation of photon emission from a single quantum dot with cw excitation and pulsed excitation is investigated in details. To calculate the second-order correlation function for optical pumping, we deduce rate equations with a simplified two-level model under cw excitation and present the master equation approach in the interaction picture to the study of evolution of a three-level system under pulsed excitation. In addition, we report photon correlation measurements on a single self-assembled In 0.5 Ga 0.5 As quantum dot, which show strong antibunching behaviour under both the conditions of cw and pulsed excitations. The calculated results are in agreement with the experimental measurements.
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.
The Rabi oscillations of the exciton of the excited state in single semiconductor quantum dots were investigated by using the photoluminesence and nano-spectroscopy technique. The population on the excited state oscillated as a function of phase angle of the qubit were recorded, in which pulse-pairs with the adjustable time delay were used as the excitation. The quality factors of free rotation is about 9.8×104, and that of the dynamic rotation is about 18 for the single quantum dot excitonic qubit based on the experimental observations, The decoherece mechanism of Rabi oscillation stem from the capture processes from wetting layer to quantum dot is also analyzed. The exciton coherent control and the statistic characteristics of single photon emission in single semiconductor quantum dot are discussed as well.